Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.

The discovery of a universal behavior in rare‐earth (RE)‐substituted perovskite BiFeO3 is reported. The structural transition from the ferroelectric rhombohedral phase to an orthorhombic phase exhibiting a double‐polarization hysteresis loop and substantially enhanced electromechanical properties is found to occur independent of the RE dopant species. The structural transition can be universally achieved by controlling the average ionic radius of the A‐site cation. Using calculations based on first principles, the energy landscape of BiFeO3 is explored, and it is proposed that the origin of the double hysteresis loop and the concomitant enhancement in the piezoelectric coefficient is an electric‐field‐induced transformation from a paraelectric orthorhombic phase to the polar rhombohedral phase.

Dynamics of domain interfaces in a broad range of functional thin-film materials is an area of great current interest. In ferroelectric thin films, a significantly enhanced piezoelectric response should be observed if non-180 degrees domain walls were to switch under electric field excitation. However, in continuous thin films they are clamped by the substrate, and therefore their contribution to the piezoelectric response is limited. In this paper we show that when the ferroelectric layer is patterned into discrete islands using a focused ion beam, the clamping effect is significantly reduced, thereby facilitating the movement of ferroelastic walls. Piezo-response scanning force microscopy images of such islands in PbZr0.2Ti0.8O3 thin films clearly point out that the 90 degrees domain walls can move. Capacitors 1 microm2 show a doubling of the remanent polarization at voltages higher than approximately 15 V, associated with 90 degrees domain switching, coupled with a d33 piezoelectric coefficient of approximately 250 pm V-1 at remanence, which is approximately three times the predicted value of 87 pm V-1 for a single domain single crystal.

Typically, polarization and strain in ferroelectric materials are coupled, leading to the generally accepted direct relation between polarization and unit-cell tetragonality. Here, by means of high-resolution transmission electron microscopy we map, on the unit-cell scale, the degree of tetragonality and the displacements of cations away from the centrosymmetry positions in an ultrathin epitaxial PbZr(0.2)Ti(0.8)O(3) film on a SrRuO(3) electrode layer deposited on a SrTiO(3) substrate. The lattice is highly tetragonal at the centre of the film, whereas it shows reduced tetragonality close to the interfaces. Most strikingly, we find that the maximum off-centre displacements for the central area of the film do not scale with the tetragonality. This challenges the fundamental belief in a strong polarization-tetragonality coupling in PbTiO(3)-based ferroelectrics, at such thicknesses. Furthermore, a systematic reduction of the atomic displacements is measured at the interfaces, suggesting that interface-induced suppression of the ferroelectric polarization plays a critical role in the size effect of nanoscale ferroelectrics.

We report on the discovery of a lead-free morphotropic phase boundary in Sm doped BiFeO 3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric (FE) to antiferroelectric (AFE) transition at approximately Bi 0.86 Sm 0.14 FeO 3 with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented Pb(Zr,Ti)O 3 (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT.

A nonvolatile highly scalable multilevel memory based on ferroelectric domain walls is demonstrated.

BiFeO(3) is one of the most studied multiferroic materials. Both its magnetic and ferroelectric properties can be influenced by doping. A large body of work on the doped material has been presented in the past couple of years. In this paper we provide a perspective on general doping concepts and their impact on the material's functionality.

Wafer-scale fabrication of ferroelectric oxide nanoshell tubes as well as ordered nanotube arrays have been accomplished using a simple and convenient fabrication method that allows full tailoring of tube dimensions as well as array pattern and size. Using different silicon and alumina templates, barium titanate and lead zirconate titanate tubes with diameters ranging from 50 nm up to several micrometers meter and lengths of more 100 m have been fabricated. Ferroelectric switching of submicrometer tubes has been shown using piezoresponse scanning probe microscopy.