2021
DOI: 10.1016/j.matt.2021.05.016
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Advances in strain engineering on oxide heteroepitaxy

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Cited by 4 publications
(3 citation statements)
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References 11 publications
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“…Thus, these results demonstrate the continuous strain relaxation of KNO thin films by adjusting the film thicknesses, leading to different strain states in the films. Compared with the conventional epitaxial strain imposed by the misfit strain from the underlying substrates, the continuous strain states achieved by controlling the strain relaxation process through tuning the film thicknesses can overcome the substrate limitation.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, these results demonstrate the continuous strain relaxation of KNO thin films by adjusting the film thicknesses, leading to different strain states in the films. Compared with the conventional epitaxial strain imposed by the misfit strain from the underlying substrates, the continuous strain states achieved by controlling the strain relaxation process through tuning the film thicknesses can overcome the substrate limitation.…”
Section: Resultsmentioning
confidence: 99%
“…[12,14,23] In recent years, several progresses on continuously tuning strains of perovskite oxide films have been made. Deng et al reported a method to continuously tune epitaxial strain by varying the thickness of the buffer layer [28][29][30] while freestanding films could be tuned by bending [31] or stretching flexible organic substrates. [32,33] In this work, we adopt molecular beam epitaxy (MBE) to prepare the freestanding BFO film.…”
Section: Introductionmentioning
confidence: 99%
“…Deng et al. reported a method to continuously tune epitaxial strain by varying the thickness of the buffer layer [ 28–30 ] while freestanding films could be tuned by bending [ 31 ] or stretching flexible organic substrates. [ 32,33 ]…”
Section: Introductionmentioning
confidence: 99%