2012
DOI: 10.1021/nl2035749
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Strain-Engineering of Band Gaps in Piezoelectric Boron Nitride Nanoribbons

Abstract: Two-dimensional atomic sheets such as graphene and boron nitride monolayers represent a new class of nanostructured materials for a variety of applications. However, the intrinsic electronic structure of graphene and h-BN atomic sheets limits their direct application in electronic devices. By first-principles density functional theory calculations we demonstrate that band gap of zigzag BN nanoribbons can be significantly tuned under uniaxial tensile strain. The unexpected sensitivity of band gap results from r… Show more

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Cited by 187 publications
(133 citation statements)
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References 38 publications
(46 reference statements)
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“…A single value of bending rigidity 0.95 eV in Equation (1) can describe very well the dependence of E BN on tube radii r, regardless of the rollup direction of the h-BN tubes, indicating the isotropic nature of the bending rigidity for single-layer h-BN. We note that the bending rigidity of h-BN tubes was also reported in reference, [18] where the author showed slight difference in the bending rigidity of h-BN in different directions. What we report here for isotropic bending property in h-BN is consistent with the prediction by elasticity theory that trigonal symmetry crystals in 2D have isotropic bending properties.…”
supporting
confidence: 82%
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“…A single value of bending rigidity 0.95 eV in Equation (1) can describe very well the dependence of E BN on tube radii r, regardless of the rollup direction of the h-BN tubes, indicating the isotropic nature of the bending rigidity for single-layer h-BN. We note that the bending rigidity of h-BN tubes was also reported in reference, [18] where the author showed slight difference in the bending rigidity of h-BN in different directions. What we report here for isotropic bending property in h-BN is consistent with the prediction by elasticity theory that trigonal symmetry crystals in 2D have isotropic bending properties.…”
supporting
confidence: 82%
“…[15][16][17] Now it has been revealed that mechanical strains can tune the band gaps of h-BN nanoribbons (h-BNNR). [18] This justifies the course to re-examine h-BN for all the extraordinary properties * Corresponding author. Email: yujie_wei@lnm.imech.ac.cn observed in graphene.…”
mentioning
confidence: 94%
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“…The 10% tensile stress in zigzag boron nitride nanoribbons was found to reduce the band gap energy value from 3.5 eV to 1.0 eV (Qi et al 2012). Thus, the applied voltage during the I-V measurement may lower the bandgap energy slightly at the þ ve potential (tensile stress) and increased at -ve (compressive stress), which, subsequently, will lead to light interacting charge recombination device similar to P-N junction (Qi et al 2012). The other possible contributions of current may be due to heating through absorbed light, and the interaction of radiation with crystal lattice and generation of electric dipoles (though transmitted light).…”
Section: Methodsmentioning
confidence: 96%
“…For piezoelectric materials, recently, it has been proposed that the stress can lead to change in local electronic band structure and cause its tilt (Seinfeld and Pandis 2006;Hu et al 2010). The 10% tensile stress in zigzag boron nitride nanoribbons was found to reduce the band gap energy value from 3.5 eV to 1.0 eV (Qi et al 2012). Thus, the applied voltage during the I-V measurement may lower the bandgap energy slightly at the þ ve potential (tensile stress) and increased at -ve (compressive stress), which, subsequently, will lead to light interacting charge recombination device similar to P-N junction (Qi et al 2012).…”
Section: Methodsmentioning
confidence: 99%