Nanoelectromechanical Systems (NEMS)

Nicu, Liviu; Auzelyté, Vaida; Villanueva, Luis Guillermo; Barniol, N.; Pérez‐Murano, F.; Venstra, Warner J.; Zant, Herre S. J. van der; Abadal, G.; Savu, Veronica; Brugger, Jürgen

doi:10.1002/9783527676330.ch9

Cited by 3 publications

(2 citation statements)

References 150 publications

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“…1 For example, a double clamped nanometric beam (DCB) (a silicon nanowire or a carbon nanotube) presents very large resonance frequency and extremely low mass, which are both highly convenient to detect minuscule quantities of mass. 2,3 Also, DCB 4 or more complex structures 5 can be integrated within CMOS circuits to build high frequency oscillators that eventually may substitute present hybrid and heterogeneous integration approaches for signal processing.…”

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confidence: 99%

Tuning piezoresistive transduction in nanomechanical resonators by geometrical asymmetries

Llobet

Sansa

Lorenzoni

et al. 2015

Applied Physics Letters

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The effect of geometrical asymmetries on the piezoresistive transduction in suspended double clamped beam nanomechanical resonators is investigated. Tapered silicon nano-beams, fabricated using a fast and flexible prototyping method, are employed to determine how the asymmetry affects the transduced piezoresistive signal for different mechanical resonant modes. This effect is attributed to the modulation of the strain in pre-strained double clamped beams, and it is confirmed by means of finite element simulations. V C 2015 AIP Publishing LLC.[http://dx.doi.org/10.1063/1.4928709]Resonating nanomechanical structures are attractive building blocks for the realization of high performance sensors and integrated oscillators.1 For example, a double clamped nanometric beam (DCB) (a silicon nanowire or a carbon nanotube) presents very large resonance frequency and extremely low mass, which are both highly convenient to detect minuscule quantities of mass.2,3 Also, DCB 4 or more complex structures 5 can be integrated within CMOS circuits to build high frequency oscillators that eventually may substitute present hybrid and heterogeneous integration approaches for signal processing.The practical application of nanomechanical resonators requires an efficient method for detecting their oscillation, which becomes increasingly difficult as the dimensions of the structures shrink. Electrical read-out of the oscillation is one of the most straightforward ways of obtaining compact systems, enabling the possibility of simultaneous detection of a large number of resonating elements. Electrical transduction can be implemented, for example, by capacitive, 5 piezo-electric, 6 or piezo-resistive 7 read-out. Compared to other methods, piezoresistive read-out presents the advantage of easy implementation, since the beam itself acts as a piezoresistive gauge, simplifying device design and fabrication.While the so called giant piezoresistance effect has enabled piezoresistive read-out in DCB silicon nanowires fabricated by bottom-up methods, 8,9 it has not been observed in top-down fabricated DCBs. Recently, it has been shown that geometrical asymmetries present in DCBs cause an enhancement of the piezoresistive transduction, allowing to obtain large read-out electrical signals from silicon nanowire resonators obtained by top-down and bottom-up fabrication methods.10 Here, we show that piezo-resistive read-out signals in DCB nanomechanical resonators can be tuned by engineering the asymmetry of the device, and in particular, by inducing deliberate asymmetries that enhance the transduction of specific resonant modes.We have focused the present study on DCB nanomechanical resonators fabricated by a fast, accurate, and flexible prototyping method based on the combination of focused ion beam (FIB) exposure and wet silicon etching, 11 which is compatible with CMOS technology. 12 Next, we present the main details of the fabrication process, the electrical characterization setup, and the experimental results that show the influence of the geometri...

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mentioning

confidence: 99%

Tuning piezoresistive transduction in nanomechanical resonators by geometrical asymmetries

Llobet

Sansa

Lorenzoni

et al. 2015

Applied Physics Letters

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“…For example, within the area of nanomechanics, devices shaped as nanowires or nanobeams have been extensively employed for the creation of high performance mass sensors and integrated oscillators, 1,2 electromechanical resonators, 3 and chemical and biological sensors. 4 Since nanoelectromechanical systems (NEMS) are widely employed in the microelectronic industry, obtaining a reliable quantitative evaluation of the built-in stress induced during the various fabrication steps is crucial to account for changes in the electromechanical properties, like piezoresistive transduction, resonant frequency, or elastic constant.…”

Section: Introductionmentioning

confidence: 99%

Evaluating the compressive stress generated during fabrication of Si doubly clamped nanobeams with AFM

Lorenzoni

Llobet

Gramazio

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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In this work, the authors employed Peak Force tapping and force spectroscopy to evaluate the stress generated during the fabrication of doubly clamped, suspended silicon nanobeams with rectangular section. The silicon beams, released at the last step of fabrication, present a curved shape that suggests a bistable buckling behavior, typical for structures that retain a residual compressive stress. Both residual stress and Young's modulus were extracted from experimental data using two different methodologies: analysis of beam deflection profiles and tip-induced mechanical bending. The results from the two methods are compared, providing an insight into the possible limitations of both methods.

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A Bridge-Balancing Circuit for Balanced Measurement of Resonant Sensors

Brausen

Sit

2020

IEEE Trans. Instrum. Meas.

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Nanoelectromechanical Systems (NEMS)

Cited by 3 publications

References 150 publications

Tuning piezoresistive transduction in nanomechanical resonators by geometrical asymmetries

Tuning piezoresistive transduction in nanomechanical resonators by geometrical asymmetries

Evaluating the compressive stress generated during fabrication of Si doubly clamped nanobeams with AFM

A Bridge-Balancing Circuit for Balanced Measurement of Resonant Sensors

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