Evaluating the compressive stress generated during fabrication of Si doubly clamped nanobeams with AFM

Lorenzoni, Matteo; Llobet, Jordi; Gramazio, Federico; Sansa, Marc; Fraxedas, Jordi; Pérez‐Murano, F.

doi:10.1116/1.4967930

Cited by 7 publications

(6 citation statements)

References 25 publications

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“…Various issues discussed in our work have already been addressed in other papers [1][2][3][12][13][14] . A small fraction of these papers deals with the complete sequence of steps that must be covered to fully monitor the effect of strain on a specific photonic device 3 .…”

Section: Introductionmentioning

confidence: 99%

Strain engineering in III-V photonic components through structuration of SiNx films

Ahammou

Abdelal

Landesman

et al. 2021

Journal of Vacuum Science &Amp; Technology B

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We describe work to quantify the effects of structured dielectric thin films, such as SiNx, at the surface of III-V semiconductors, in terms of strain engineering with applications to photonic components such as waveguides and lasers. We show that the strain in the semiconductor can be engineered by controlling the stress in the dielectric thin film by tuning its deposition process. In the first part of this study, we describe how we can control the amount of this built-in mechanical stress, in the case of SiNx, over a large range, from highly tensile (300 MPa) to highly compressive (-800 MPa), using two different kinds of plasma-enhanced chemical vapor deposition reactors: a standard capacitively-coupled reactor with radio-frequency excitation and an electron cyclotron resonance reactor with micro-wave excitation. We focused on characterizing and understanding these thin films' optical and chemical bonding properties through spectroscopic ellipsometry and Fourier transform infrared spectroscopy. We have also studied their mechanical properties experimentally using the wafer curvature measurement technique, microstructure fabrication, and nano-indentation measurements. In the second part, we show accurate

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Section: Introductionmentioning

confidence: 99%

Strain engineering in III-V photonic components through structuration of SiNx films

Ahammou

Abdelal

Landesman

et al. 2021

Journal of Vacuum Science &Amp; Technology B

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“…According to SRIM (The Stopping and Range of Ions in Matter) simulations, the implanted and damaged volume in silicon goes up to 40nm in depth when ions goes perpendicular to the surface. This has been concluded from the TEM measurements after the ion implantation [35] and the SEM images after the silicon etching [36].…”

Section: Device and Fabricationmentioning

confidence: 75%

Multi-Frequency Resonance Behaviour of a Si Fractal NEMS Resonator

et al. 2020

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Novel Si-based nanosize mechanical resonator has been top-down fabricated. The shape of the resonating body has been numerically derived and consists of seven star-polygons that form a fractal structure. The actual resonator is defined by focused ion-beam implantation on a SOI wafer where its 18 vertices are clamped to nanopillars. The structure is suspended over a 10 μm trench and has width of 12 μm. Its thickness of 0.040 μm is defined by the fabrication process and prescribes Young’s modulus of 76 GPa which is significantly lower than the value of the bulk material. The resonator is excited by the bottom Si-layer and the interferometric characterisation confirms broadband frequency response with quality factors of over 800 for several peaks between 2 MHz and 16 MHz. COMSOL FEM software has been used to vary material properties and residual stress in order to fit the eigenfrequencies of the model with the resonance peaks detected experimentally. Further use of the model shows how the symmetry of the device affects the frequency spectrum. Also, by using the FEM model, the possibility for an electrical read out of the device was tested. The experimental measurements and simulations proved that the device can resonate at many different excitation frequencies allowing multiple operational bands. The size, and the power needed for actuation are comparable with the ones of single beam resonator while the fractal structure allows much larger area for functionalisation.

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“…Followed by etching of undoped Si, Si NWs are obtained. Either isotropic or crystal orientation-dependent, selective wet etch by KOH, [55][56][57][58] TMAH, [59][60][61][62][63][64][65][66][67] or anisotropic dry etch by RIE, [68] or DRIE [69] are used for this purpose.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

“…[45] Copyright 2020, IEEE. crystal orientation-dependent, selective wet etch by KOH, [55][56][57][58] TMAH, [59][60][61][62][63][64][65][66][67] or anisotropic dry etch by RIE, [68] or DRIE [69] are used for this purpose.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

et al. 2023

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The miniaturization of microelectromechanical systems (MEMS) physical sensors is driven by global connectivity needs and is closely linked to emerging digital technologies and the Internet of Things. Strong technical advantages of miniaturization such as improved sensitivity, functionality, and power consumption are accompanied by significant economic benefits due to semiconductor manufacturing. Hence, the trend to produce smaller sensors and their driving force resemble very much those of the miniaturization of integrated circuits (ICs) as described by Moore's law. In this respect, with its IC‐, and MEMS‐compatibility, and scalability, the silicon nanowire is frequently employed in frontier research as the sensor building block replacing conventional sensors. The integration of the silicon nanowire with MEMS has thus generated a multiscale hybrid architecture, where the silicon nanowire serves as the piezoresistive transducer and MEMS provide an interface with external forces, such as inertial or magnetic. This approach has been reported for almost all physical sensor types over the last decade. These sensors are reviewed here with detailed classification. In each case, associated technological challenges and comparisons with conventional counterparts are provided. Future directions and opportunities are highlighted.

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Evaluating the compressive stress generated during fabrication of Si doubly clamped nanobeams with AFM

Cited by 7 publications

References 25 publications

Strain engineering in III-V photonic components through structuration of SiNx films

Strain engineering in III-V photonic components through structuration of SiNx films

Multi-Frequency Resonance Behaviour of a Si Fractal NEMS Resonator

Silicon Nanowires Driving Miniaturization of Microelectromechanical Systems Physical Sensors: A Review

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