Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

Cima, C. A.; Boudinov, H.; Souza, J. P. de; Suprun-Belevich, Yu.; Fichtner, P.F.P.

doi:10.1063/1.1305928

Cited by 15 publications

(4 citation statements)

References 13 publications

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“…Nevertheless, a sufficiently uniform strain is generated that well-defined features have been observed in HRXRD in a number of previous experiments on Si (Refs. [15][16][17][18][19][20], GaAs (Refs. 17 and 21), and Ge.…”

Section: (Ii)mentioning

confidence: 99%

Damage accumulation in Si during high-dose self-ion implantation

Zhong

Bailat

Averback

et al. 2004

Journal of Applied Physics

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Accumulation and annealing of damage in Si implanted with self-ions to high doses were investigated using a combination of grazing incidence diffuse x-ray scattering, high-resolution x-ray diffraction scans, and transmission electron microscopy. During implantation at 100°C, small vacancy and interstitial clusters formed at low doses, but their concentrations saturated after a dose of Ϸ3 ϫ 10 14 cm −2. The concentration of Frenkel defects at this stage of the implantation was Ϸ1 ϫ 10 −3. At doses above 1 ϫ 10 15 cm −2 , the concentration of implanted interstitial atoms began to exceed the Frenkel pair concentration, causing the interstitial clusters to grow, and by Ϸ3 ϫ 10 15 cm −2 , these clusters formed dislocation loops. Kinematical analysis of the rocking curves illustrated that at doses above 1 ϫ 10 15 cm −2 the "plus one" model was well obeyed, with one interstitial atom being added to the dislocation loops for every implanted Si atom. Measurements of Huang scattering during isochronal annealing showed that annealing was substantial below 700°C for the specimens irradiated to lower doses, but that little annealing occurred in the other samples owing to the large imbalance between interstitial and vacancy defects. Between 700 and 900°C a large increase in the size of the interstitial clusters was observed, particularly in the low-dose samples. Above 900°C, the interstitial clusters annealed.

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Section: (Ii)mentioning

confidence: 99%

Damage accumulation in Si during high-dose self-ion implantation

Zhong

Bailat

Averback

et al. 2004

Journal of Applied Physics

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“…30-34͒ have thus received scant attention. 40 The purpose of the present study of the formation of cavities by neon implantation is to obtain a better understanding of damage accumulation and cavity formation in silicon. Neon differs from helium in at least two major respects: its introduction introduces significantly more concomitant radiation damage than that of helium and it is likely that Ne is unable to permeate from the bubbles-leading to gas-filled cavities rather than empty ones even after hightemperature annealing.…”

Section: Introductionmentioning

confidence: 99%

Damage accumulation in neon implanted silicon

Oliviero

Peripolli

Amaral

et al. 2006

Journal of Applied Physics

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Damage accumulation in neon-implanted silicon with fluences ranging from 5 ϫ 10 14 to 5 ϫ 10 16 Ne cm −2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250°C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250°C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as ͕311͖ defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

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“…Size of the biggest bubble has reached to a maximum possible value before breakup on further addition of gas atoms. In thermodynamic equilibrium internal gas pressure is compensated by the surface tension of the surrounding matrix [46]. At this stage, system has acquired a critical state and further increase in dose disturbs the equilibrium.…”

Section:  (Degrees)mentioning

confidence: 99%

Neon and Manganese Ion Implantation into AlInN

Majid¹

2012

Ion Implantation

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Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures

Cited by 15 publications

References 13 publications

Damage accumulation in Si during high-dose self-ion implantation

Damage accumulation in Si during high-dose self-ion implantation

Damage accumulation in neon implanted silicon

Neon and Manganese Ion Implantation into AlInN

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