Stoichiometry of Nickel Oxide Films Prepared by ALD

Bachmann, Julien; Zolotaryov, A.; Albrecht, Ole; Goetze, Silvana; Berger, Andreas; Hesse, D.; Новиков, Д. В.; Nielsch, Kornelius

doi:10.1002/cvde.201004300

Cited by 46 publications

(47 citation statements)

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“…These are relatively long saturation times compared to other processes performed in this reactor, [ 43,44 ] perhaps refl ecting slow kinetics of the Ni(Cp) 2 on the surface. Bachmann et al also used a relatively long Ni(Cp) 2 pulse of 2 s compared to an O 3 pulse of just 0.2 s [ 41 ] and Lu et al used a Ni(Cp) 2 pulse time of 7 s for their process. [ 37 ] The thickness measured as a function of number of cycles under saturation conditions is shown in Figure 1 c. The steady state growth rate is 0.63 Å cycle −1 and there is a nucleation delay of ≈20 cycles on O 3 -cleaned Si.…”

Section: Resultsmentioning

confidence: 98%

“…Because of discrepancies in previous reports of this NiO ALD process, we performed a systematic characterization of the ALD deposition. [ 37,41,42 ] NiO was deposited at a stage temperature of 275 °C and a Ni(Cp) 2 bubbler temperature of 85-90 °C. Under these conditions, measurements of fi lm thickness after 75 cycles for different pulse lengths showed that saturation was achieved after ≈8 s for the Ni(Cp) 2 pulse and ≈3 s for the O 3 pulse as seen in Figure 1 a,b.…”

Section: Resultsmentioning

confidence: 99%

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Creating Highly Active Atomic Layer Deposited NiO Electrocatalysts for the Oxygen Evolution Reaction

Nardi

Yang

Dickens

et al. 2015

Advanced Energy Materials

235

173

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Atomic layer deposition (ALD) provides a promising route for depositing uniform thin coatings of electrocatalysts useful in many technologies, including the splitting of water. For materials such as NiO x that readily form hydrous oxides, however, the smooth, compact films deposited by ALD may result in higher overpotentials due to low catalyst surface area compared to other deposition methods. Here, the use of ALD–NiO thin films as oxygen evolution reaction (OER) electrocatalysts is explored. Thin films of crystalline ALD–NiO are deposited and OER activity is tested using cyclic voltammetry (CV). Fe incorporated from the electrolyte can increase the activity of NiO, and it is shown that the turnover frequency (TOF) increases tenfold by going from an Fe‐poor to Fe‐rich KOH electrolyte. Applying a potential exfoliates the NiO, increasing the number of electrochemically accessible Ni sites. Interestingly, by X‐ray photoelectron spectroscopy (XPS) and CV, it is found that an Fe‐rich electrolyte reduces the amount of restructuring and oxidation is found. It is shown that a high surface area, high TOF catalyst may be created by using a two‐step process in which the sample is sequentially conditioned in Fe‐poor then Fe‐rich KOH. This work highlights the importance of pretreatment on catalytic activity for compact NiO films deposited by ALD.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Creating Highly Active Atomic Layer Deposited NiO Electrocatalysts for the Oxygen Evolution Reaction

Nardi

Yang

Dickens

et al. 2015

Advanced Energy Materials

235

173

View full text Add to dashboard Cite

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“…Such a large variation in temperatures is due to the technological differences in the device ALD setups. There are different types of reagent containers such as open source boats [29,36], stainless-steel bottles [61], and stainless-steel bubblers [47], which differ in their construction. Depending on the type of the container, the requirements for the reagent vapor pressure are different.…”

Section: Atomic Layer Deposition Of Nio Thin Filmsmentioning

confidence: 99%

“…In this work, for the NiCp 2 and Ni(MeCp) 2 storage and pulse, we used stainless-steel bottles, which require the highest temperature of over 100 • C [60,61]. We selected 90 • C as the first temperature of the container.…”

Section: Atomic Layer Deposition Of Nio Thin Filmsmentioning

confidence: 99%

Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries

et al. 2019

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Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film electrodes for Li-ion batteries. In this work, bis(methylcyclopentadienyl) nickel(II) (Ni(MeCp) 2 ) and bis(cyclopentadienyl) nickel(II) (NiCp 2 ) were used as precursors for NiO ALD. Oxygen plasma was used as a counter-reactant. The films were studied by spectroscopic ellipsometry, scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray reflectometry, and X-ray photoelectron spectroscopy. The results show that the optimal temperature for the deposition for NiCp 2 was 200-300 • C, but the optimal Ni(MeCp) 2 growth per ALD cycle was 0.011-0.012 nm for both precursors at 250-300 • C. The films deposited using NiCp 2 and oxygen plasma at 300 • C using optimal ALD condition consisted mainly of stoichiometric polycrystalline NiO with high density (6.6 g/cm 3 ) and low roughness (0.34 nm). However, the films contain carbon impurities. The NiO films (thickness 28-30 nm) deposited on stainless steel showed a specific capacity above 1300 mAh/g, which is significantly more than the theoretical capacity of bulk NiO (718 mAh/g) because it includes the capacity of the NiO film and the pseudo-capacity of the gel-like solid electrolyte interface film. The presence of pseudo-capacity and its increase during cycling is discussed based on a detailed analysis of cyclic voltammograms and charge-discharge curves (U(C)).NiO nanofilms are produced using various methods [12] such as thermal spraying, pulsed laser deposition, sol-gel, spin-coating, dip-coating, chemical vapor deposition, and atomic layer deposition (ALD). ALD is the most promising technology because it provides control over the thickness and purity of coatings with high precision, and can deposit uniform surface coatings on of complex shape and even porous and high aspect ratio substrates [13][14][15]. This method could be a crucial factor for transition from 2D to 3D solid-state batteries (SSB), which are structured on 3D substrates with high aspect ratio instead of planar substrates. It could increase the energy density of SSB with the same thickness of the electrode to maintain the required conductivity of the layers [16]. ALD is based on a realization of the sequence of chemical reactions between gaseous reagents and the surface species of the substrate, separated in time by purges with an inert gas to prevent uncontrolled reactions between the reactants and the reaction products. Because of the self-limiting nature, this method allows the deposition of films in a layer-by-layer fashion and the control of the thickness with high precision [13].When selecting the deposition conditions via ALD, it is necessary to consider the stability and reactivity of the precursors. Many precursors have been tested for ALD NiO so far, but the most frequently used are shown in Table 1: nickel(II) acetylacetonate (Ni(acac) 2 ), bis(2,2,6,6-tetramethylheptane-3,5dionate)nickel(II) (Ni(thd) 2 ), bis(cyclopentadienyl) nickel(II) (NiCp 2 ), and NiCp 2 -based compounds such as ...

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“…Therefore the development of sensors that are tough small size, long lifetime, and quick in response and with sufficient sensitivity for the detection of nitrogen dioxide in low concentrations, in the environment is so important and needed. The surface morphology and particle size is the key variables in the sensing properties of Metal oxide gas sensors and are mostly organized by the adsorbed oxygen molecules, obviously increasing the surface-tovolume ratio or enhancing the surface adsorption which will increase the resistance change and improve the sensitivity [33]. It is known for many years that the adsorption-dependent electrical properties of metal oxide semiconductors are often sensitive to much gaseous ambient.…”

Section: Gas Sensing Propertiesmentioning

confidence: 99%

Impact of the thickness of Nickel oxide film for nitrogen dioxide gas sensing Applications

Mezher¹,

Hassan²,

Hassan³

et al. 2017

KJAR

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Nickel oxide (NiO) thin films were formed by RF reactive magnetron sputtering onto glass substrates. The Argon and Oxygen partial pressure were (3.2×10 -3 torr) and (2.12×10 -2 torr) respectively at room temperature. The thickness of the films deposited was in the range of 50-150 nm. The thickness necessity structural, electrical and sensing properties of (NiO) films were methodically examined. X-ray diffraction method which shows polycrystalline landscape with preferred reflection peak at (200) plane. Scanning electron microscope analysis revealed that the growth of nanorods in all the films. The gas sensitivity of nitrogen dioxide gas was (67 %). It was observed that the gas sensitivity for (NiO) films was increased as film thickness increases.

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Stoichiometry of Nickel Oxide Films Prepared by ALD

Abstract: Nickel oxide films obtained from nickelocene and ozone by atomic layer deposition at 230°C are substoichiometric, but have the crystal structure of NiO. Oxygen can be driven out of the solid by annealing under inert atmosphere, or added into it via aerobic annealing.

Cited by 46 publications

References 14 publications

Creating Highly Active Atomic Layer Deposited NiO Electrocatalysts for the Oxygen Evolution Reaction

Creating Highly Active Atomic Layer Deposited NiO Electrocatalysts for the Oxygen Evolution Reaction

Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries

Impact of the thickness of Nickel oxide film for nitrogen dioxide gas sensing Applications

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