Stoichiometry detuned silicon carbide as an orange and white light band solid-state phosphor

Tai, Hung-Yu; Chi, Yu‐Chieh; Cheng, Chih-Hsien; Wang, Po-Sheng; Wu, Chih-I; Lin, Gong‐Ru

doi:10.1039/c5ra23379h

Cited by 4 publications

(7 citation statements)

References 45 publications

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“…Single Source Precursors: In terms of source precursors, thermal and PE-CVD predominantly use either inorganic perhydridosilanes or halosilanes as Si sources and hydrocarbons as C sources for the formation of SiCx. Silane (SiH4), 9,18,31,36,38,40,42,44,45,51 trichlorosilane (SiHCl3 or TCS), 38,57,58,60,61 and tetrachlorosilane (SiCl4) 37,47,[53][54][55][56][57] continue to be the most preferred Si precursors, while methane, acetylene, ethylene, and propane are the hydrocarbons most employed as C sources. 9,18,31,[36][37][38]40,42,44,45,47,51,[53][54][55][57][58][59] However, the universally established use of perhydridosilanes or halosilanes presents significant challenges that limit applicability in many emerging SiC applications which employ thermally, chemically, and/or electrically fragile substrates.…”

Section: Cubic 3c-sic: As Discussed Above Extensive Research Has Beenmentioning

confidence: 99%

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

Kaloyeros,

Arkles

2023

ECS J. Solid State Sci. Technol.

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In Part I of a two-part report, we provide a detailed and systematic review of the latest progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing on chemical vapor deposition (CVD) thin film technologies. To this end, up-to-date results from both incremental developments in traditional SiC applications as well major advances in novel SiC usages are summarized. Emphasis is placed on new chemical sources for Si and C, particularly in the form of single source SiC precursors as well as emerging molecular and atomic scale deposition techniques, with special attention to their effects on resulting film properties and performance. The review also covers relevant research and development efforts as well as their potential impact on and role in the introduction of new technological applications. Part II will focus on findings for physical vapor deposition (PVD) as well as other deposition techniques.

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Section: Cubic 3c-sic: As Discussed Above Extensive Research Has Beenmentioning

confidence: 99%

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

Kaloyeros,

Arkles

2023

ECS J. Solid State Sci. Technol.

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“…Tohmon et al claimed that the PL of NOV defects in oxygendeficient high-purity silica glass at 459 nm [80]. The blue PL for NOV defects not only in the Si- In contrast to SiO x , either SiN x or SiC x is also considered as host matrix to confine the Si-QDs [63][64][65][66][67][68][69][70][71][72][73][74][75][76]. In 1992, Chen et al utilized the PECVD and Ar + -laser annealing to fabricate the Si:H/SiN x :H multiple quantum well (MQW).…”

Section: Photoluminescence Of Si-qdmentioning

confidence: 99%

“…Huang et al changed the SiH 4 fluence from 0.5 to 8 sccm to suppress the C/Si composition ratio and increase the Si-QD size for blue-to-green shifting PL wavelength from 440 to 520 nm [72]. Tai et al further demonstrated the Si-rich SiC synthesis for obtaining red PL between 630 and 660 nm from Si-QDs and 480 nm for SiC-QDs [73,74].…”

Section: Photoluminescence Of Si-qdmentioning

confidence: 99%

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Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Cheng

Lin

2020

Materials

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This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.

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“…Electrically driven semiconductor quantum dots (QDs)‐based light‐emitting devices (LEDs) including those based on self‐assembled QDs have attracted great interest during the past decade owing to stability and color‐tunable luminescence of the QDs. To realize quasi‐white electroluminescence by using QDs, the researchers usually utilize QDs plus blue LED chips, different types of QDs, or QDs plus organic/rare earth ion phosphors to construct LEDs. Herein, we report the quasi‐white electroluminescence by using the pure silicon carbide QDs‐based LEDs.…”

mentioning

confidence: 99%

Quasi‐White Light‐Emitting Devices Based on SiC Quantum Dots

Chen

Guo

et al. 2018

Physica Rapid Research Ltrs

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White electroluminescence based on quantum dots (QDs) is usually realized by incorporating different types of QDs or QDs plus rare earth ion phosphors into a single device. Herein, we report quasi-white electroluminescence in pure silicon carbide QDs-based light-emitting devices (LEDs). The carrier transport and recombination mechanisms are investigated through analyzing the current density versus bias curves and spatial distribution of energy levels. The carrier transport mechanism is dominated by quantum tunneling at low bias and direct injection at high bias, respectively. The quasi-white electroluminescence arises from recombination of the injected electrons and holes in the SiC QDs in the devices.Electrically driven semiconductor quantum dots (QDs)-based light-emitting devices (LEDs) [1] including those based on selfassembled QDs [2,3] have attracted great interest during the past decade owing to stability and color-tunable luminescence of the QDs. To realize quasi-white electroluminescence by using QDs, the researchers usually utilize QDs plus blue LED chips, [4,5] different types of QDs, [6] or QDs plus organic/rare earth ion phosphors [7][8][9] to construct LEDs. Herein, we report the quasiwhite electroluminescence by using the pure silicon carbide QDs-based LEDs.

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Stoichiometry detuned silicon carbide as an orange and white light band solid-state phosphor

Abstract: Broadband orange and white light band solid-state phosphor using stoichiometry detuned a-SixC1−x films with buried SiC and Si nanocrystals are demonstrated for white lighting applications.

Cited by 4 publications

References 45 publications

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Quasi‐White Light‐Emitting Devices Based on SiC Quantum Dots

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