2001
DOI: 10.1016/s0925-4005(01)00757-2
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Stoichiometry and microstructure effects on tungsten oxide chemiresistive films

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Cited by 147 publications
(91 citation statements)
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“…than the reported values (10 3 -10 7 Ωcm) for r. f. sputtered WO 3 films [34] It is known that the conductivity of WO 3 films depends on the O 2 /Ar ratio during the sputtering process [34].…”
Section: Electrical Propertiesmentioning
confidence: 65%
“…than the reported values (10 3 -10 7 Ωcm) for r. f. sputtered WO 3 films [34] It is known that the conductivity of WO 3 films depends on the O 2 /Ar ratio during the sputtering process [34].…”
Section: Electrical Propertiesmentioning
confidence: 65%
“…This is probably due to the presence of WO 2 , the 4f 7/2 peak of which will largely overlap the metal 4f 5/2 peak. There also appears to be some remaining WO 3 . Again, the presence of these reduced forms is likely to be due to reduction by the ion etching beam.…”
Section: Resultsmentioning
confidence: 99%
“…[1][2][3] Coatings have been produced by a wide variety of techniques including solgel, [4][5][6] spin-coating, [7] electrochemical deposition, [8] vacuum physical vapour deposition (PVD), [9][10][11][12][13] thermal chemical vapour deposition (CVD) [14,15] and spray pyrolysis. [16][17][18] Solution methods are widely used but can result in film structural and durability constraints.…”
Section: Introductionmentioning
confidence: 99%
“…) is an n-type semiconducting metal oxide with a wide band gap that exhibit superior electronic and optical properties [1][2][3][4][5][6][7]. At room temperature, WO 3 usually exists as a mixture of monoclinic () and triclinic () crystal phase structure, and undergoes phase changes to higher symmetries upon heating [8][9][10][11][12].…”
Section: Introduction Tungsten Trioxide (Womentioning
confidence: 99%