Growth of Thin Films of Molybdenum and Tungsten Oxides by Combustion CVD Using Aqueous Precursor Solutions

Davis, Martin J.; Benito, G.; Sheel, David W.; Pemble, Martyn E.

doi:10.1002/cvde.200306260

Cited by 23 publications

(13 citation statements)

References 26 publications

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“…The broken vertical lines in Figure 9 indicate the energetic position of the W 4f 7/2 states of WC (31.5 eV) [35,[39][40][41][42] , and WO 3 (35.6 eV), respectively. [35,36] These values are in agreement with literature values within AE 0.2 eV. Since the W 4f levels display a well-resolved spin-orbit splitting, for each species, the corresponding Full Paper Fig.…”

Section: Film Compositionsupporting

confidence: 89%

[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

Jipa¹,

Heinemann²,

Schneider³

et al. 2010

Chemical Vapor Deposition

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Tungsten -tungsten carbide thin films are deposited by metal-organic (MO)CVD on silica-coated silicon wafers using [cis-(1,3-butadiene) 2 W(CO) 2 ] and [cis-(1,3-cyclohexadiene) 2 W(CO) 2 ], respectively, as tunable precursor complexes. The compounds are prepared through photochemical ligand exchange reactions from [W(CO) 6 ] and fully characterized, including X-ray structure determination and detailed differential thermal analysis (DTA)/thermogravimetry (TG) investigations. Gas-phase diffusion coefficients and the vapor pressure of the compounds are calculated. The MOCVD experiments are performed in a vertical cold-wall reactor and the exhaust gas is analyzed by gas chromatography (GC). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) measurements are utilized for film characterization. Consequences of the high oxophilicity of freshly formed tungsten surfaces, consecutive surface reactions of the complex ligands, film growth, and film properties are discussed. Inside the layers, tungsten carbide is identified as the main component.

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Section: Film Compositionsupporting

confidence: 89%

[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

Jipa¹,

Heinemann²,

Schneider³

et al. 2010

Chemical Vapor Deposition

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“…B. Treasure and Co. Ltd), and SiO 2 -precoated glass prepared by CCVD, all of dimensions 22 cm × 8.5 cm × 0.3 cm. The CCVD system employed in the growth of the substrates has been described in detail elsewhere [34]. Using this system, SiO 2 layers were deposited using tetraethyl orthosilicate (TEOS) delivered in a nitrogen gas stream as a vapor from a bubbler set to a temperature of 87°C.…”

Section: Methodsmentioning

confidence: 99%

The Growth of Thermochromic VO2 Films on Glass by Atmospheric-Pressure CVD: A Comparative Study of Precursors, CVD Methodology, and Substrates

Vernardou¹,

Pemble²,

Sheel³

2006

Chem. Vap. Deposition

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This paper briefly reviews previous work on the growth of thermochromic VO 2 thin films on glass, and then examines and compares three different CVD approaches and two precursor systems for the production of these materials. It is found that atmospheric pressure (AP) CVD using vanadium(IV) chloride (VCl 4 ) and H 2 O on commercial SiO 2 -precoated glass yields the smoothest films, with transition temperature (T c ) values of around 58°C, while APCVD using vanadyl(IV) acetyl acetonate (VO(acac) 2 ) on the same substrates produces slightly rougher films, which are more crystalline and possess a T c with a value as low as 51.5°C. Films grown using VO(acac) 2 in a direct liquid-injection metal-organic (DLI-MO) CVD reactor exhibited considerably poorer thermochromic and morphological properties as compared with those grown by APCVD. These findings are discussed in terms of possible variations in growth mechanisms occurring during the three processes studied.

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“…Three different plasma gas inlet configurations were identified see Fig. 3), inlet configurations (1) to (3). Figure 4 shows the flow pattern inside the plasma chamber under the assumption of having a wide area, circular, ªdiffuser-typeº inlet on the bottom of the plasma source (Fig.…”

Section: Computational Fluid Dynamics Modeling For Reactor Designmentioning

confidence: 99%

“…Combustion (flame) CVD [2,3] is on the right track to wider industrialization but is limited to the deposition of oxides. RF barrier (ªcoronaº) discharge is a standard method for surface treatment but the application of the method for continuous AP-PECVD is limited because of tray deposition onto electrodes and non-uniform plasma formation (streamer).…”

Section: Introductionmentioning

confidence: 99%

Remote Microwave PECVD for Continuous, Wide‐Area Coating Under Atmospheric Pressure

Hopfe

Spitzl²,

Dani

et al. 2005

Chemical Vapor Deposition

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In order to establish economic coating technologies for mass-produced materials, the widely used, microwave plasma-enhanced (PE) CVD technology has been extended to atmospheric pressure operation. Microwave plasma activation substantially widens the range of potential applications compared to conventional atmospheric CVD, because it is capable of processing temperaturesensitive substrates. A cylinder-type microwave cavity was scaled-up to different working diameters. The half-meter range has already been achieved, and further scale-up potential can be demonstrated. The microwave source offers access to a spatially extended, homogeneous, stable, non-thermal plasma, even in the downstream region. A range of gases can be used for plasma excitation, and the emanating plasma is clean because there is negligible wall interaction. Fluid dynamics modeling was used as a tool for both reactor design and process optimization. In-situ process characterization was provided by spectroscopic methods (optical emission spectra (OES), Fourier-transform infrared (FTIR)) and a range of atomic and molecular intermediates, precursor fragments, and reaction products were identified. A deep precursor fragmentation occurs in the remote plasma region leading to inorganic layer materials. Silica layers were deposited on stainless steel and glass. Deposition rates were in the range 15±100 nm s ±1 (static) and 0.3±2.0 nm m s ±1 (dynamic). Layer properties were determined by spectroscopic ellipsometry and FTIR reflectance spectroscopy, elastic recoil detection analysis (ERDA), and nano-indentation. The optical properties and the network structure of the silica layers on both substrates are close to bulk silica.

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Growth of Thin Films of Molybdenum and Tungsten Oxides by Combustion CVD Using Aqueous Precursor Solutions

Cited by 23 publications

References 26 publications

[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

The Growth of Thermochromic VO2 Films on Glass by Atmospheric-Pressure CVD: A Comparative Study of Precursors, CVD Methodology, and Substrates

Remote Microwave PECVD for Continuous, Wide‐Area Coating Under Atmospheric Pressure

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Growth of Thin Films of Molybdenum and Tungsten Oxides by Combustion CVD Using Aqueous Precursor Solutions

Cited by 23 publications

References 26 publications

[cis‐(1,3‐Diene)2W(CO)2] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

[cis‐(1,3‐Diene)2W(CO)2] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

The Growth of Thermochromic VO2 Films on Glass by Atmospheric-Pressure CVD: A Comparative Study of Precursors, CVD Methodology, and Substrates

Remote Microwave PECVD for Continuous, Wide‐Area Coating Under Atmospheric Pressure

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Product

Resources

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[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films