2005
DOI: 10.1016/j.susc.2005.09.004
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STM study of the early stages of the Cr/Si(1 1 1) interface formation

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Cited by 16 publications
(8 citation statements)
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“…At Cr thicknesses (0.02-0.08 nm) the formation of 3D CrSi 2 islands has been found [11]. This mechanism correlates with STM data [12] of Cr deposition on Si(111) at 450-500°C, when different 2D and 3D islands have been formed on silicon surface at Cr thicknesses 0.008-0.08 nm (coverages 0.1-1.0 Ml). At higher Cr thicknesses (0.08-0.125 nm or 1.0-1.56 Ml) the lateral overgrowth of 3D CrSi 2 islands without its corresponding height increasing [11] has been observed.…”
Section: Nanosize Island Formationsupporting
confidence: 69%
“…At Cr thicknesses (0.02-0.08 nm) the formation of 3D CrSi 2 islands has been found [11]. This mechanism correlates with STM data [12] of Cr deposition on Si(111) at 450-500°C, when different 2D and 3D islands have been formed on silicon surface at Cr thicknesses 0.008-0.08 nm (coverages 0.1-1.0 Ml). At higher Cr thicknesses (0.08-0.125 nm or 1.0-1.56 Ml) the lateral overgrowth of 3D CrSi 2 islands without its corresponding height increasing [11] has been observed.…”
Section: Nanosize Island Formationsupporting
confidence: 69%
“…4(a,b)). Therefore they are named the 1st type 'quasi magic' clusters [1]. These clusters occupy mainly FHUC of Si(111)7 × 7 and grow there.…”
Section: Resultsmentioning
confidence: 99%
“…However, their optical properties still have not been studied. Formation of magic clusters (MC) in reactive systems [1] differs from those in non-reactive ones [2] ('adsorbate-silicon' system is named 'reactive', if reaction resulted in silicide(s) formation takes place in it). The resulting compounds can differ in optical and conducting properties.…”
Section: Introductionmentioning
confidence: 99%
“…Among these silicides the CrSi 2 compound has been intensively studied because of its 0.35 eV band gap, which gives perspective for the applications in optoelectronic devices, such as silicon-based photodetector [1][2][3]. Although there is a considerable sets of research devoted to the study of the growth phenomena in the relatively thick Cr-silicide films (with thickness of dozens to thousands Å ) [4][5][6] and elucidation of their structural, electrical and optical properties [7][8][9], but the work on very thin films (deposited amount is in range of few monolayers) of Cr on Si substrate is very limited [10]. In recent years, tremendous interests have been generated in the fabrication of nanoscale wires and tubes [11].…”
Section: Introductionmentioning
confidence: 99%