Approaches to growth and study of properties of multilayer silicon–silicide heterostructures with buried semiconductor silicide nanocrystallites

Silicon‐silicide quasi‐zero dimensional heterostructures for silicon based photonics, opto‐ and thermoelectronics

“…Procedures of β-FeSi 2 , CrSi 2 , Mg 2 Si, and high density of island formation on the Si(111) and Si(100) substrates, growth conditions and deposition rates of silicon and metals have been early described in the articles [18][19][20]. Growth conditions of MnSi 1.74 islands and films on silicon substrates were described in work [27].…”

“…Fundamentals of such technology with embedded in silicon matrix of nanocrystals (NCs) have been now developed for few semiconductor silicides [17][18][19][20]. Significant successes have been achieved in the formation of new materials and structures in the fields of photonics [21,22].…”

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

“…The reaction leading to partial decomposition of silicide and formation of magnesia at the surface were previously reported at higher temperature in thicker silicide layers. 30,34 This self-limited process is followed by a decrease of Mg oxide peak while oxygen atoms still incorporate on top of the surface in region (III).…”

Solid‐state synthesis of single phase Mg2Si films on Si substrates deposited at various sputtering powers

“…As one of the ecologically friendly semiconductors [3], Mg 2 Si has attracted much attention in recent years due to its good ohmic contact character with n-type Si and potential applications in the wavelength ranging between 1.2-1.8 µm for optical fibres and high performance thermoelectric devices [4,5]. However, formation of high quality Mg 2 Si bulk and thin film is not easy because magnesium has very high vapor pressure even at 473 K [6], very low condensation coefficient [2], and Mg 2 Si seems to be easy to decompose and oxide [7][8][9]. Nevertheless, many attempts were made in last decades.…”