Stitching Error Analysis in an Electron Beam Lithography System:  Column Vibration Effect

Ohta, Hiroya; Matsuzaka, Takashi; Saitou, Norio; Kawasaki, Kenji; Kohno, Toshihiko; Hoga, Morihisa

doi:10.1143/jjap.32.6044

Cited by 3 publications

References 10 publications

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Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D

Hattori¹,

Magoshi²,

Sunaoshi³

et al. 1994

Jpn. J. Appl. Phys.

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Self-diagnosis functions related to patterning accuracy are important techniques for developing, improving and maintaining electron beam exposure systems. An evaluation method of beam position deviation has been developed to reduce fluctuation of patterning accuracy. High-frequency beam position deviation was detected by scanning the beam on a W mark with subsequent fast fourier transform analysis. A magnetic field compensator has been developed to reduce low-frequency beam position deviations induced by ambient magnetic field changes. The beam position deviations of high- and low-frequency have been restricted to about 17 nm (3σ). A mark stand, which carries a height-changeable mechanism, was developed to calibrate the beam deflection accuracy depending on the Z direction. By applying the above diagnostic function, a main frame stitching accuracy of 32 nm has been achieved with short turnaround time.

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Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D

Hattori¹,

Magoshi²,

Sunaoshi³

et al. 1994

Jpn. J. Appl. Phys.

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Recent Progress in Electron-Beam Cell Projection Technology

Yamashita

Nozue

Nomura

et al. 1996

Jpn. J. Appl. Phys.

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NEC's recent progress in the development of electron-beam (EB) cell projection technology is reviewed. To make it practical, not only the development of a high-performance EB direct writing system but also the establishment of its peripheral technologies in the micro-fabrication process are pursued. In order to obtain high lithographic performance in the EB cell projection lithography system HL-800D (Hitachi), the fundamental effects in EB lithography such as the Coulomb interaction effects, the proximity effect and electron scattering by cell projection aperture (EB mask), have been studied. In addition, high-resolution and high-sensitivity resists have been developed. The Coulomb interaction effects are found to be the most critical issue in cell projection lithography because it affects resolution, linewidth accuracy and throughput. For high resolution, the beam current was reduced to suppress the Coulomb interaction. As a result, a resolution of 0.15 µ m, which is sufficient for fabricating a 1G DRAM, was obtained using the high-resolution resist. To achieve high-linewidth accuracy of less than ±5% for 0.2 µ m lines-and-lines (L/S), optimization of the EB mask structure and the development of a proximity effect correction method which includes the Coulomb interaction effect correction were carried out. Inspection technology for devices of 0.2 µ m or less was also investigated in order to accurately measure linewidth, and to detect defects, particularly those caused by shot stitching error. Finally, the cell projection technology has been applied to the device fabrication of a 1G DRAM, and was demonstrated to be feasible for the development of futuristic advanced devices.

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E-Beam Mask Writers

Rizvi¹

2005

Handbook of Photomask Manufacturing Technology

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Stitching Error Analysis in an Electron Beam Lithography System: Column Vibration Effect

Cited by 3 publications

References 10 publications

Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D

Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D

Recent Progress in Electron-Beam Cell Projection Technology

E-Beam Mask Writers

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