Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

Бахадырханов, М. К.; Sattarov, O. E.; Илиев, Х. М.; Ayupov, K. S.; Umaier, Tuérdi

doi:10.1134/1.1992635

Cited by 2 publications

(2 citation statements)

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“…Having analyzed and summarizing the above experimental data one can tentatively assume that at direct switching mode of the diode structure, we are witnessing the so-called effect of negative photoconductivity due to the process of injection of current carriers associated with level E = 0.4 eV [8][9][10][11][12]. Under constant illumination, photoconductivity starts at Ei0.26 eV and decreases within the 0.4 eV range with a relatively sharp minimum at E  0.52 eV, where the effect of infrared quenching of photoconductivity occurs.…”

Section: Resultsmentioning

confidence: 99%

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

Sh Mavlyanov,

Khakkulov,

Sattarov

et al. 2024

J. Phys.: Conf. Ser.

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The paper presents the results of study of the photoconductivity spectra of sulfur- and <sulfur+manganese>-doped samples of silicon (Si<S>, Si<MnS>) under dark conditions and while samples were subjected to constant light in forward and reverse switching modes. The paper also presents the calculation results of the value of the band gap (Eg ) of <sulfur+zinc> -doped silicon samples (Si<ZnS>). Spatial analogues of generally accepted GaAs structure such as Si2Mn2S and Si2Zn2S are hypothesized to be brought up in the result of above mixed dopings. Tentative investigations of the short-circuit current and open-circuit voltage of p-n-structures, as well as the photoconductivity of such structures, together with the analysis of their lux-ampere characteristic might serve for proposing potential varying band structures for solar cells.

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Section: Resultsmentioning

confidence: 99%

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

Sh Mavlyanov,

Khakkulov,

Sattarov

et al. 2024

J. Phys.: Conf. Ser.

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“…In such materials, the local electrical neutrality is absent and the system itself is in an extremely nonequilibrium state. The electrophysical and photoelectric properties of such materials essentially differ from weakly-compensated materials in which there are observed some new physical phenomena [2,3].…”

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confidence: 99%

Sensitive thermosensors on the basis of highly compensated silicon

Бахадырханов

Valiev

Nasriddinov

et al. 2007

Surf. Engin. Appl.Electrochem.

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The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked out thermosensor are higher than those of the existing sensitive thermosensor. It is stated that the thermosensor on the basis of highly compensated silicon doped with manganese Si 〈 B,Mn 〉 more effectively functions in the region of temperatures T = 100-400 K, and the thermosensor on the basis of Si 〈 B,S 〉 can be successfully used in the region of more high temperatures T = 200-450 ° C.

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Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

Cited by 2 publications

References 0 publications

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

Photoconductivity and bandgap of binary impurity - doped crystalline silicon

Sensitive thermosensors on the basis of highly compensated silicon

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