RF‐plasma treatment of ion‐implanted Al–SiO2Si structures is shown to decrease the defect concentration considerably and to activate the doping impurity. When the face side of the wafer is treated defect annealing processes are increased considerably. Thermal desorption method shows that RF plasma treatment increases the hydrogen concentration in the semiconductor wafer. Hydrogen can be introduced into the wafer from the SiO2 layer as well as from gas discharge ambient. ESR demonstrates semiconductor crystalline structure ordering during RF‐plasma annealing. A mechanism of vacancy defect annealing is proposed which takes into account deep level recharging and the role of atomic hydrogen.
Flash lamp annealing is shown to be capable of radiation defect elimination in a subsurface Si layer and of activation of arsenic implanted impurities in SiSiO2 structures. However this treatment results in the formation of SiSiO2 interface electron states with high density and maximum in the energy range from Ec − 0.30 eV to Ec − 0.40 eV. The combination of low temperature thermal annealing of flash lamp annealing with RF plasma treatment results in an efficient doping activation of the arsenic impurity and deep level elimination. RF plasma treatment considerably reduces the concentration of the deep level (Ec − 0.52 eV) generated, which is not possible using low temperature annealing in a nitrogen ambient.
It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P+Ga-] are formed. It is assumed that the formation of such quasineutral molecules [P+Ga–] stimulates the formation of Si2GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon.
The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked out thermosensor are higher than those of the existing sensitive thermosensor. It is stated that the thermosensor on the basis of highly compensated silicon doped with manganese Si 〈 B,Mn 〉 more effectively functions in the region of temperatures T = 100-400 K, and the thermosensor on the basis of Si 〈 B,S 〉 can be successfully used in the region of more high temperatures T = 200-450 ° C.
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