Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toŝhiyuki; Koike, Masayoshi

doi:10.7567/jjap.34.l1517

Cited by 174 publications

(53 citation statements)

References 14 publications

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“…Pulsed [1,2] and continuous-wave operations [3] of laser diodes at room temperature have been achieved. These advances have been accomplished by metal-organic chemical vapor deposition (MOCVD).…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

Nakamura

Kikuchi

Kusakabe

et al. 1999

phys. stat. sol. (a)

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Section: Introductionmentioning

confidence: 99%

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

Nakamura

Kikuchi

Kusakabe

et al. 1999

phys. stat. sol. (a)

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“…After outstanding work in crystal growth, such as the development of low-temperature-deposited (LT) buffer layers [1] and the discovery of p-type conduction [2], blue and green light-emitting diodes (LEDs) [3,4] and violet laser diodes (LDs) [5,6] were realized.…”

Section: Introductionmentioning

confidence: 99%

UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density

Kamiyama

Iwaya

Takanami

et al. 2002

phys. stat. sol. (a)

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Using a hetero-epitaxial lateral overgrowth (ELO) technology with low-temperature deposited AlN interlayer, high-quality crack-free Al 0.22 Ga 0.78 N with low dislocation density is realized. The dislocation density in the Al 0.22 Ga 0.78 N was reduced to as low as the order of 10 7 cm --2 over the whole wafer. Applying the high-quality AlGaN layer to a UV light-emitting diode (LED), high output power of more than 0.1 mW at a forward current of 50 mA has been demonstrated with the emission peak wavelengths from 323 to 352 nm. The highest output power of 0.6 mW is obtained for the 352 nm LED with GaN/AlGaN multiple quantum well active layer. The emission efficiency was dependent on the wavelength, and the 323 nm LED has the lowest output power of 0.18 mW at 50 mA bias. One of the factors determining the external quantum efficiency is thought to be an inferior hole spread in highly resistive p-type layers.

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“…At present, sapphire is the most commonly used substrate for GaN-based device growth. The most popular method of GaN-based epilayer growth is to use GaN or AlN films deposited at a low temperature (LT) on sapphire substrate as a buffer layer [1,2]. However, the GaN-based LED grown on sapphire using the LT-buffer layer usually shows a high density of threading dislocations because of a large mismatch in the lattice constant and the thermal expansion coefficients between the epilayer and the substrate [3].…”

mentioning

confidence: 99%

InGaN multiple‐quantum‐well light‐emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition

Zhang

Egawa²,

Liu

et al. 2003

phys. stat. sol. (c)

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An InGaN multiple-quantum-well (MQW) LED grown on AlN/sapphire template is reported. Comparing with the conventional LED on sapphire using a low temperature (LT) buffer layer, the LED on AlN/sapphire template shows better electrical and optical characteristics. The crystalline quality of the LED structure was investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The zeroth, -first-and -second-order satellite peaks and the Pendellösung fringes can be seen clearly in (0004) XRD ω/2θ rocking curves for the LED on AlN/sapphire template. While, for the LED on sapphire, only the zeroth and -first-order satellite peaks can be seen. The full width at half maximum (FWHM) of GaN in (0004) ω scan is about 82.8 and 231.6 arcsec for the LED grown on AlN/sapphire template and sapphire, respectively. The dislocation density is 5 × 10 7 -3 × 10 8 cm -2 for the LED on AlN/sapphire template and 2-5 × 10 9 cm -2 for the LED on sapphire. The reverse leakage current of the LED on AlN/sapphire template is over one order of magnitude lower than that on sapphire due to the low threading dislocation density in the epilayer. The optical power of the LED on AlN/sapphire template increased sublinearly up to 300 mA injection current. 1 Introduction GaN-based electronic and optoelectronic devices have been extensively studied. The major obstacle to obtain high-quality nitride materials and devices is the lack of native substrates. At present, sapphire is the most commonly used substrate for GaN-based device growth. The most popular method of GaN-based epilayer growth is to use GaN or AlN films deposited at a low temperature (LT) on sapphire substrate as a buffer layer [1,2]. However, the GaN-based LED grown on sapphire using the LT-buffer layer usually shows a high density of threading dislocations because of a large mismatch in the lattice constant and the thermal expansion coefficients between the epilayer and the substrate [3]. Recently, high-quality GaN-based films were obtained on AlN/sapphire template instead of sapphire substrate [4,5]. In this study, the InGaN MQW LEDs were grown on AlN/sapphire template. Comparing with the conventional LED on sapphire using the LT-GaN buffer layer, the LED on AlN/sapphire template exhibits a better electrical and optical characteristic due to a low threading dislocation density in the epilayer and the high thermal conductive AlN layer.

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Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

Abstract: Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.

Cited by 174 publications

References 14 publications

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density

InGaN multiple‐quantum‐well light‐emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition

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