UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density

Kamiyama, Satoshi; Iwaya, Motoaki; Takanami, S.; Terao, S.; Miyazaki, Akira; Amano, Hiroshi; Akasaki, Isamu

doi:10.1002/1521-396x(200208)192:2<296::aid-pssa296>3.0.co;2-z

Cited by 52 publications

(23 citation statements)

References 13 publications

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“…However, conventional ELO methods for the reducing threading dislocations in GaN are not effective for the growth of AlGaN with low dislocation density, because of its low lateral growth rate and the adhesion of AlGaN polycrystals on the dielectric masks. In order to solve the above-mentioned problems, we developed a new growth method called hetero-ELO [59,60], which enabled to grow a crack-free AlGaN template with dislocation densities as low as 2 Â 10 7 cm À2 . The AlGaN templates were grown on the periodically grooved GaN films, which were covered with the LT-AlN interlayer with thickness of 20 nm.…”

Section: Recent Advance In Uv Light-emitting Devicesmentioning

confidence: 99%

Key inventions in the history of nitride-based blue LED and LD

Akasaki

2007

Journal of Crystal Growth

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Section: Recent Advance In Uv Light-emitting Devicesmentioning

confidence: 99%

Key inventions in the history of nitride-based blue LED and LD

Akasaki

2007

Journal of Crystal Growth

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“…We succeeded to reduce all types of threading dislocations by combining low temperature interlayer and lateral growth technique. Details of the growth procedure have been reported elsewhere [11][12][13]. PL…”

Section: Pacsmentioning

confidence: 99%

UV‐LED Using p‐Type GaN/AlN Supperlattice Cladding Layer

Iwaya

Terao

Takanami

et al. 2002

phys. stat. sol. (c)

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PACS : 78.55.Cr; 78.66.Fd; 78.67.De; 85.60.Jb GaN/AlN supperlattice was used as the p-type cladding layer of UV-LED. I-V characteristics indicates that UV-LED having GaN/AlN supperlattice has much lower series resistance than the conventional UV-LED in which ternary alloy AlGaN was used as the cladding layer.Introduction High efficiency light emitting diodes (LEDs) in blue and green region based on group III nitride semiconductors have been developed by achieving several breakthroughs such as improvement of the crystalline quality of GaN using a low-temperature-deposited (LT-) buffer layer technique [1] and realization of conductivity control of nitrides [2][3][4]. In these devices, GaInN-based quantum wells are usually used as an active layer.Fabrication of UV devices will surely give a big impact on the applications such as super high-density optical storage, chemical sensing, flame detection, excitation source for phosphors or fine lithography. In order to establish such UV-devices, thick AlGaN films with high-AlN molar fraction and high-crystalline quality, high-efficiency AlGaN alloys active layers and low-resistance and wide-bandgap p-cladding layers are essential.We succeeded to grow high quality and thick AlGaN free of cracks using an LT-AlN interlayer technique [5]. High-sensitivity flame sensor was developed using this technique [6,7]. Transmission electron microscopic study showed that the pure screw-type and mixed-type dislocations in the AlGaN films were reduced, while high-density pure edge-type dislocation was still contained as high as mid 10 9 cm --2 in these films [8]. Therefore, the fabrication of highly luminescent AlGaN was difficult.In order to reduce all types of threading dislocations in GaN, novel growth technique called "epitaxial lateral overgrowth" has been performed and led to the success of growing partially very low dislocation density GaN [9]. Unfortunately, due to a strong adhesion of AlN on the mask surface, polycrystalline AlGaN is formed on the mask, which prohibits epitaxial lateral overgrowth of AlN containing alloys [10]. Moreover, this technique has the problem of crack generation. We succeeded to reduce all types of threading dislocations by combining low temperature interlayer and lateral growth technique. Details of the growth procedure have been reported elsewhere [11][12][13]. PL

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“…They succeeded in an electrically pulsed operation of UV-LD at 350.9 nm, for the first time, using a GaN/AlGaN MQW active layer grown on the thick and crack-free AlGaN with a low threading dislocation density. Yoshida et al obtained the thick-Al x Ga 1-x N (x = 0.2-0.3) with low dislocation density by hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) with triangular GaN seed crystal [7,8]. The dislocation density of crack-free AlGaN was observed between 1.8-6.0 × 10 8 /cm 2 from cathodoluminescence (CL) dark spots [9].…”

Section: Introductionmentioning

confidence: 99%

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

Kim

Bae

et al. 2017

Appl. Sci. Converg. Technol.

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The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of 950 o C and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crackfree and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the 4 μm -thick Al 0.2 Ga 0.8 N was crack-free over entire 2-inch wafer. The dislocation density of Al 0.2 Ga 0.8 N was as low as ~7.6 × 10 8 /cm 2 measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/ AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with 5 μm-wide and 700 μm-long cavity for electrical properties. The turn on voltage was below 5 V and the resistance was55 Ω at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

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UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density

Cited by 52 publications

References 13 publications

Key inventions in the history of nitride-based blue LED and LD

Key inventions in the history of nitride-based blue LED and LD

UV‐LED Using p‐Type GaN/AlN Supperlattice Cladding Layer

Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

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