Stiffness constants for anisotropic hexagonal ultra thin overlayers

Kunert, H.W.; Schönfeldt, J. H.

doi:10.1016/s0040-6090(02)01252-x

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…Under carefully optimized MOVPE conditions a homogeneous GaP-layer is formed, which can be overgrown at temperatures of about 675°C for the self-annihilation of remaining anti-phase domains. Details of the Si-substrate preparation as well as the GaP-nucleation and overgrowth steps have been verified for the realization of defect-free thin GaP-layers on (001) Si-substrate (13,14). On these GaP-on-Si-templates, epitaxial layer structures of the (GaIn)(NAsP)/(BGa)(PAs)-material system have been deposited in the MOVPE-system ( Aix200-gas foil rotation reactor (Aixtron AG)) of our Si-III/V-deposition cluster.…”

Section: Epitaxial Growthmentioning

confidence: 99%

Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate

Kunert¹,

Volz

Stolz

2010

ECS Trans.

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The novel direct band gap, dilute nitride Ga(NAsP)-material system allows for the first time the monolithic integration of a III/V laser material lattice matched to Si substrate. This lattice-matched approach offers the possibility for a high-quality, low defect density integration of a III/V-laser material potentially leading to long-term stable laser devices on Si-substrate. The broad area laser structures consist of pseudomorphically strained active Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures (MQWHs) embedded in thick doped (BGa)P waveguide layers, grown by a specific low-temperature metal organic vapour phase epitaxy (MOVPE) process on (001) Si-substrate. This paper will present and discuss the current status of the material and device optimization to realise electrical injection laser diodes as a basis for Si-photonics based optoelectronic integrated circuits (OEICs) with novel functionalities.

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Section: Epitaxial Growthmentioning

confidence: 99%

Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate

Kunert¹,

Volz

Stolz

2010

ECS Trans.

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“…For CNTs of larger radii, curvature-derived elastic anisotropy is neglected and in-plane stresses and strains obey the plane-stress relation of flat graphite sheets. Since graphite sheets have a hexagonal symmetry, the stress-strain relations under conditions of plane stress are given by [17][18][19][20] (1)…”

Section: An Anisotropic Elastic Shell Model For Small-radius Swcntsmentioning

confidence: 99%

Chirality-Dependent Mechanical Behavior of Carbon Nanotubes Based on an Anisotropic Elastic Shell Model

2009

Mathematics and Mechanics of Solids

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Motivated by recently reported chirality-dependent mechanical phenomena of small-radius carbon nanotubes, an anisotropic elastic shell model is developed in the present paper for small-radius single-walled carbon nanotubes. Due to curvature-derived elastic anisotropy, small-radius single-walled carbon nanotubes are better described by anisotropic plane-stress relations rather than graphite sheets of hexagonal symmetry which are governed by an isotropic plane-stress relation. Based on an orthotropic plane-stress elastic relation for zigzag and armchair single-walled carbon nanotubes, the suggested model is formulated for chiral single-walled carbon nanotubes of arbitrary chiral angle through a small-angle (less than π/12) rotation of the coordinate system. The results obtained show that the suggested anisotropic shell model can explain the chirality-dependent mechanical phenomena reported in the recent literature, and could be used to study chirality-dependent mechanical behavior of multi-walled carbon nanotubes of smaller innermost radii.

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Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure

2015

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Stiffness constants for anisotropic hexagonal ultra thin overlayers

Cited by 3 publications

References 12 publications

Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate

Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate

Chirality-Dependent Mechanical Behavior of Carbon Nanotubes Based on an Anisotropic Elastic Shell Model

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure

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