Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate

Abstract

The novel direct band gap, dilute nitride Ga(NAsP)-material system allows for the first time the monolithic integration of a III/V laser material lattice matched to Si substrate. This lattice-matched approach offers the possibility for a high-quality, low defect density integration of a III/V-laser material potentially leading to long-term stable laser devices on Si-substrate. The broad area laser structures consist of pseudomorphically strained active Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures (MQWHs) embedded in thick doped (BGa)P waveguide layers, grown by a specific low-temperature metal organic vapour phase epitaxy (MOVPE) process on (001) Si-substrate. This paper will present and discuss the current status of the material and device optimization to realise electrical injection laser diodes as a basis for Si-photonics based optoelectronic integrated circuits (OEICs) with novel functionalities.