Step-Induced Optical Anisotropy of Vicinal Si(001)

Abstract

It is demonstrated, using reflectance difference spectroscopy, scanning tunneling microscopy, and low-energy electron diffraction, combined with deliberate straining of the surface, that the presence of atomic steps dramatically changes the optical anisotropy of the Si(001) surface. The step-induced reflectance difference signal originates predominately from rebonded steps and is comparable in magnitude to that of the terrace signal. [S0031-9007(98)08282-9]

Investigation of molecule chemisorption on Si(001)2 × 1 surfaces by surface reflectance spectroscopies

“…Figure 1 displays the real part spectra of the RA obtained on clean nominal and vicinal Si(001) surfaces. The RAS for vicinal surface is similar to the numerous previous results [5,16,23]. In the case of the nominal surface, our RA spectrum (a) is also identical to the previous results obtained by two groups [16,23].…”

Ab initiooptical properties of Si(100)

“…Shioda and van der Weide 17 found a similar behavior by decreasing the miscut angle of the vicinal surfaces, which corresponds to reducing the majority domain coverage (or, in other words, the anisotropy of the surface) . Yasuda et al 28 , from the analysis of their RT spectra, concluded that this peak is essentially originated by a step induced dicroism; however, the opposite conclusion has been reached by Jaloviar et al 34 , who singled out the contribution of the steps to the RA. In our spectra a peak in the energy region around 4.3 eV is present for the p(2 × 2) and c(4x2) reconstructions, in agreement with the observed reduction with increasing temperature.…”

“…The agreement between the theoretical spectra obtained with the TB scheme and those computed within the DFT-LDA is not always satisfactory, confirming that the study of the optical properties of this surface is not a simple matter. From the experimental point of view, Shioda and van der Weide 17 and Jaloviar et al 34 pointed out recently the importance of a correct preparation of the clean surface (a terrace width about 1000 times larger than that obtained on vicinal surfaces, typically of 40-160Å, can be obtained with the techniques employed in Refs. 17 and 34) in order to minimize spurious effects due to the steps.…”

In situ control of As dimer orientation on Ge(100) surfaces

“…2 and 3 as shown for Si(100). 20,21 The occurrence of minority domain terraces on the Geð100Þ: As ? sample is consistent with mutually perpendicular As dimers but also with selective As desorption revealing the underlying Ge dimers.…”

“…20,21 On vicinal (100) surfaces, step-related RAS contributions depend on the step density, 21 and the atomic configuration of the steps. 20 According to Ref.…”