In situ control of As dimer orientation on Ge(100) surfaces

Abstract

Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si(001) by transmission electron microscopy J. Appl. Phys. 112, 074306 (2012) Scaling behavior of GaAs and GaMnAs quantum rings grown by droplet epitaxy Appl. Phys. Lett. 101, 141901 (2012) Magnetron-sputter deposition of high-indium-content n-AlInN thin film on p-Si(001) substrate for photovoltaic applications J. Appl. Phys. 112, 063114 (2012) Growth mechanisms of ZnO(0001) investigated using the first-principles calculation J. Appl. Phys. 112, 064301 (2012) Generation of silver-anatase nanocomposite by excimer laser-assisted processing AIP Advances 2, 032171 (2012) Additional information on Appl. Phys. Lett.

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

“…1) largely overlaps with the RA spectrum of the clean UHV-prepared Ge(100) surface. The difference in RAS amplitude might be due to the coexistence of domains with mutually perpendicular orientation 5,31,32 or to a better surface cleanliness of the sample prepared in MOVPE ambient, since many studies report on the inevitable presence of C on UHV-prepared Ge(100) surfaces. 8,33,34 The clean and the monohydride-terminated Ge(100) surfaces exhibit characteristic RAS signals, which we will apply to study the hydrogen surface coverage during preparation in the process gas ambient of a MOVPE reactor.…”

“…In the last years, there has been a renewed interest in the characterization of the structural and chemical properties of germanium (100) substrates for applications in microelectronics, 1 nanotechnology, 2 and photovoltaics. [3][4][5][6] A suitable surface preparation (in terms of surface cleanliness, termination, and reconstruction) is crucial for subsequent material and device properties. 7,8 In technologically relevant process ambients, the carrier gas (such as H 2 ) might affect surface reconstruction, 6,9 step formation, 10 and epitaxial growth.…”

In Situ Characterization of Epitaxy

“…n-type and p-type carrier concentrations from 10 16 to 10 18 /cm 3 were differentiated based on the ability of RAS to measure the surface electric field resulting from the linear electro-optic effect associated with E 1 to E 1 þ D 1 transitions (near 3 eV) with respect to a reference undoped sample. Recent work by Bruckner et al [44] showed that key details associated with As adsorption and termination of Ge, such as dimer orientation, as well as the surface step structure can be differentiated using RAS by careful experiments and complementary STM, XPS, and low-energy electron diffraction (LEED) characterization, as shown in Figure 29.18. Relating the signal to surface coverage, RAS has also been used to monitor dopant (As) segregation during Si growth [43].…”

“…Laterally patterned Si was used as a substrate to grow GaP with layers of alternating orientations as a result of differences in the GaP sublattice occupancy from antiphase domain differences created at steps. [44]. For comparison, the flipped and scaled (factor 1.38) RA spectrum of Ge (100):As 6 with predominant (2 Â 1) reconstruction is also depicted.…”

Group V adsorbate structures on vicinal Ge(001) surfaces determined from the optical spectrum

“…While there have been many RAS studies of Si(001) surfaces, there have been very few studies of Ge(001), with recent work focusing on in situ MOVPE studies, where RAS has unique advantages. [8][9][10][11] Regarding calculations of the spectral response, the situation is similar. Recently, we have calculated the optical response of some Si(001) and Ge(001) surfaces using a local-orbital-based hybrid density functional theory (DFT) approach.…”