In Situ Characterization of Epitaxy

Brown, April S.; Losurdo, Maria

doi:10.1016/b978-0-444-63304-0.00029-9

Cited by 3 publications

(2 citation statements)

References 90 publications

(69 reference statements)

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“…The strain evolution of Ba 0.5 Sr 0.5 TiO 3 thin films grown on MgO was investigated using real-time X-ray diffraction 15 . This is undoubtedly a very powerful approach but it requires a synchrotron light source 16 precluding its application as a routine measurement technique. RHEED was also employed to monitor the in-plane strain evolution, for example, during the growth of BaTiO 3 on SrTiO 3 (refs 9 , 14 ).…”

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In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction

et al. 2016

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Many properties of materials can be changed by varying the interatomic distances in the crystal lattice by applying stress. Ideal model systems for investigations are heteroepitaxial thin films where lattice distortions can be induced by the crystallographic mismatch with the substrate. Here we describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films. The stress state and evolution up to the relaxation onset are monitored during the growth of oxygen ion conducting Ce0.85Sm0.15O2-δ thin films via optical wafer curvature measurements. Increasing tensile stress lowers the activation energy for charge transport and a thorough characterization of stress and morphology allows quantifying this effect using samples with the conductive properties of single crystals. The combined in situ application of optical deflectometry and electron diffraction provides an invaluable tool for strain engineering in Materials Science to fabricate novel devices with intriguing functionalities.

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In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction

et al. 2016

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“…7,8) These techniques are quite useful for the fabrication of sophisticated and complicated structures. 9,10) Therefore, in this paper, we focus on the cleaning method in MBE. Ultrasonic degreasing and surface etching are the conventional cleaning methods in MBE.…”

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Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

Kusakabe

Sugiyama

Takenaka

et al. 2018

Jpn. J. Appl. Phys.

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Low-pressure microplasma treatment was performed to clean a substrate surface prior to the selective growth of GaN by chemical beam epitaxy. To investigate the cleaning mechanism, the process pressure and process time were systematically varied. The plasma distribution was also studied using a special sheet, whose color changes following the irradiation of plasma species. Consequently, it was found that the range of microplasma irradiation increased with decreasing process pressure, and simultaneously, the morphology of selective growth was improved. Secondary ion mass spectrometry measurements show that the oxygen concentration at the growth interface was reduced from 9.7 × 1014 to 2.6 × 1013 atoms/cm2 by the microplasma treatment. Otherwise, the surface oxides resulted in the growth of a rough surface with the suppression of the layer-by-layer growth.

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GaN‐Based Materials

Scholz

Boćkowski

Grzanka

2020

Nitride Semiconductor Technology

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In Situ Characterization of Epitaxy

Cited by 3 publications

References 90 publications

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction

Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth

GaN‐Based Materials

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In Situ Characterization of Epitaxy

Cited by 3 publications

References 90 publications

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction

Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth

GaN‐Based Materials

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Low-pressure N₂ microplasma treatment for substrate surface cleaning prior to GaN selective growth