Step coverage from an extended sputtering source

Bindell, J. B.; Tisone, T. C.

doi:10.1016/0040-6090(74)90215-6

Cited by 22 publications

(6 citation statements)

References 10 publications

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“…In the literature, there have been many attempts to analyze the growth mechanism by means of pure geometrical considerations; i.e., by assuming that vapor particles arrive at the film surface along a single angular direction [38,41]. Continuum approaches, which are based on the fact that the geometrical features of the film (i.e., the nanocolumns) are much larger than the typical size of an atom [42,266,267], have been also explored. For instance, Poxson et al [228] developed an analytic model that takes into account geometrical factors as well as surface diffusion.…”

Section: Methods To Model the Shadowing-dominated Growth Of Thin Filmsmentioning

confidence: 99%

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

Barranco

Borrás

González‐Elipe

et al. 2016

Progress in Materials Science

601

436

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a b s t r a c tThe oblique angle configuration has emerged as an invaluable tool for the deposition of nanostructured thin films. This review develops an up to date description of its principles, including the atomistic mechanisms governing film growth and nanostructuration possibilities, as well as a comprehensive description of the applications benefiting from its incorporation in actual devices. In contrast with other reviews on the subject, the electron beam assisted evaporation technique is analyzed along with other methods operating at oblique angles, including, among others, magnetron sputtering and pulsed laser or ion beam-assisted deposition techniques. To account for the existing differences between deposition in vacuum or in the presence of a plasma, mechanistic simulations are critically revised, discussing well-established paradigms such as the tangent or cosine rules, and proposing new models that explain the growth of tilted porous nanostructures. In the second part, we present an extensive description of applications wherein oblique-angle-deposited thin films are of relevance. From there, we proceed by considering the requirements of a large number of functional devices in which these films are currently being utilized (e.g., solar cells, Li batteries, electrochromic glasses, biomaterials, sensors, etc.), and subsequently describe how and why these nanostructured materials meet with these needs.

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Section: Methods To Model the Shadowing-dominated Growth Of Thin Filmsmentioning

confidence: 99%

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

Barranco

Borrás

González‐Elipe

et al. 2016

Progress in Materials Science

601

436

View full text Add to dashboard Cite

show abstract

“…They conclude that, with increasing random surface diffusion and increasing initial surface roughness, the columns grow more toward the vapour beam. Bindelt and Tisone [26] introduce shadowing for step coverage calculations. In their model, computer simulations are necessary to determine whether or not a part is shadowed.…”

Section: Angle Dependent Growth Continuum Approachmentioning

confidence: 99%

Oblique evaporation and surface diffusion

1997

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The special structure of obliquely evaporated films has its origin in shadowing phenomena during film growth. Because of shadowing, the film consists of bundles of inclined columns with the bundles being aligned perpendicularly to the vapour incidence direction. The column inclination angle lies between the film normal and the vapour incidence direction. Different models found in literature relating process parameters and film structure are discussed. It is found that surface diffusion plays an important role, especially with regard to the difference between random and directional surface diffusion. The latter is induced by the oblique evaporation process. A quantitative expression is given for the relation between process conditions and surface diffusion including the influence of substrate temperature, rate and contamination with residual gasses. Using these models and adding our new calculations, the relation between surface diffusion and film structure is discussed in detail and found to be consistent with measurements published in the literature. © 1997 Elsevier Science S.A.

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“…The application of negative bias to the substrate during deposition (75)(76)(77) to allow some resputtering has also been employed to obtain coverage on rather severe test steps. There is some question as to the role of substrate heating in this case (78). Calculations for a sputtering source (78) generally indicate the same propensity for crack formation as for evaporation sources.…”

Section: Table II Deposition Parameters For Various Studies Of Alumin...mentioning

confidence: 99%

Evolution and Current Status of Aluminum Metallization

Learn

1976

J. Electrochem. Soc.

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The requirements which have been placed on metallization for silicon integrated circuits are listed and their origins are traced. Physical models relating to various requirements are discussed. Among these are oxygen activity as a criterion for adherence, slope etching, impurity effects on resistivity, self‐shadowing effects on step coverage, and Schottky barrier formation and tunneling as a determinant of contact resistance. The procedures necessary for optimization of some of these properties are considered. Physical vapor deposition methods are reviewed and compared. The more demanding problems of interaction with silicon at contacts, electromigration‐induced failure, two‐level metallization processing, and corrosion are discussed at length. Approaches designed to allow a basically aluminum metallization to meet all requirements are presented. It is concluded that the use of aluminum alloys is the most generally beneficial technique and that additional effort must be devoted to defining a fully satisfactory method for corrosion protection.

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Step coverage from an extended sputtering source

Cited by 22 publications

References 10 publications

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

Oblique evaporation and surface diffusion

Evolution and Current Status of Aluminum Metallization

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