Evolution and Current Status of Aluminum Metallization

Learn, Arthur J.

doi:10.1149/1.2132964

Cited by 92 publications

(8 citation statements)

References 140 publications

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“…Metallization.--The interconnection and contact system has been one of the critical aspects of integrated circuits since they were invented in 1959. A number of review papers and bibliographies have been written concerning metallization technology for semiconductor device applications (155)(156)(157)(158). The primary metal used for interconnections in silicon devices and integrated circuits over the past 15 years or so has been alumi- num, due to its excellent properties, such as high conductivity, the ease of depositing and defining it, and its very good adherence to the silicon dioxide layer over which the interconnections are situated.…”

Section: New Process Developmentsnthe Central Factor Mak-mentioning

confidence: 99%

“…Periodically, certain problems related to aluminum were identified, such as electromigration (159,160), microcracking over steps (157), spiking into silicon contact regions (157), and corrosion (161). In each case modifications were introduced which allowed the continued use of an aluminum-based interconnection system.…”

Section: New Process Developmentsnthe Central Factor Mak-mentioning

confidence: 99%

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The Evolution of Silicon Semiconductor Technology: 1952–1977

Deal

Early

1979

J. Electrochem. Soc.

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Section: New Process Developmentsnthe Central Factor Mak-mentioning

confidence: 99%

Section: New Process Developmentsnthe Central Factor Mak-mentioning

confidence: 99%

The Evolution of Silicon Semiconductor Technology: 1952–1977

Deal

Early

1979

J. Electrochem. Soc.

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“…54,55 The surface diffusion of chlorine is not considered. S Cl is the sticking coefficient of Cl ͑or Cl 2 ͒ on bare Al, and Al is the number density of Al.…”

Section: Unsaturated Etching Of Al By CL 2 and Clmentioning

confidence: 99%

Semiempirical profile simulation of aluminum etching in a Cl2/BCl3 plasma

Cooperberg

Vahedi

Gottscho

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inModel for photoresist trim etch in inductively coupled CF 4 / O 2 plasma Effect of Ar addition to an O 2 plasma in an inductively coupled, traveling wave driven, large area plasma source: O 2 /Ar mixture plasma modeling and photoresist etching J. Appl. Phys. 90, 3205 (2001); 10.1063/1.1398600Modeling and simulation of feature-size-dependent etching of metal stacks A semiempirical profile simulator to predict topographic evolution during Cl 2 /BCl 3 plasma etching of photoresist patterned Al lines has been developed. Given incident flux distributions, the profile simulator uses a combination of a particle based Monte Carlo algorithm and analytic ray-tracing algorithm for solving feature-scale ion and neutral flux transport, respectively. We use angular and energy distributions for reflected ions that are consistent with experimental observation and molecular dynamic simulations. Etch yields with energy and angular dependence are experimentally determined for physical sputtering and ion-enhanced etching. The spontaneous etch rate of A1 by chlorine and the spontaneous desorption rate of Cl from photoresist are estimated from experimental results. Sticking coefficients for etchant, chlorine, and depositor, CCl x , and depositing flux are determined by fitting simulated profiles to experimental data. A semiempirical site-balance model is developed to compute the surface coverage of etchant. The reaction probability of neutrals at surfaces is self-consistently determined from the surface coverage at incident location. Competition between etching and deposition on feature sidewalls is modeled. A shock-tracking method is used to advance the profile using computed etch/deposition rates. Simulation results are presented which demonstrate that facet formation, aspect ratio dependent etching, and critical dimension gain, are captured accurately by the calibrated profile simulator. In addition, the calibrated profile simulator along with results of a 2 3 design of experiments in which photoresist and Al etch rates were measured on open frame wafers have been used to create a plasma reactor model. The reactor model relates the operational parameters including inductively coupled power, rf bias and gas flow ratio to the flux variables, i.e., Cl flux, ion flux, ion energy, and depositor flux, that are used as inputs to the profile simulator. In this manner, calibration of the profile simulator requires a minimum of high resolution, expensive, patterned wafers. The reactor model so created is shown to be in quantitative agreement with results from the hybrid plasma equipment model ͑Ref. 1͒.

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“…The substrates were heated to 250°C during the evaporation'to further improve step coverage [105]. In order to achieve tapered metalization edges and alleviate step coverage problems during the second level metalization, nitric acid was added to the phosphoric acid etchant used to pattern the first level of aluminum [106]. The nitric acid causes the photoresist to lose adherence and gradually l i f t from the edge inwards during etching, resulting in the desired edge profile.…”

Section: 3mentioning

confidence: 99%

A new MOS photon-counting sensor operating in the above-breakdown regime

Lester

Pulfrey

1984

IEEE Trans. Electron Devices

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A MOS optical sensor that utilizes avalanche multiplication in silicon is proposed and investigated "both theoretically and experimentally. The abovebreakdown operating regime is discussed and it is shown how a MOS photosensor may be operated in a photon counting mode by pulsing it into very deep depletion, beyond the point where avalanche "breakdown normally occurs. Avalanche discharges in such a MOS sensor are self-quenching due to the formation of an inversion layer. This self-quenching property suggests that a monolithic selfscanned array of MOS photon counting sensors should be possible. It is described how specially designed charge-coupled arrays (PC-CCD's) could be operated in this new regime. The high response of silicon in the visible and near infrared, compared with the responsive quantum efficiency of the commonlyused photocathode materials, gives the proposed imager a distinct advantage over presently-existing photon counting sensors in these spectral regions. It is shown that a PC-CCD must be fahricated on a p-type silicon substrate and illuminated from the back side in order to obtain a high avalanche initiation probability for the photogenerated carriers. It is also shown that all thermally activated, steady-state dark generation of carriers can be reduced to a negligible level by cooling the sensor to 100 K or less, while the generation due to interband tunneling may be reduced to an acceptable level by ensuring that the peak fields within the depletion region remain below approximately h.3 x 10^ Vcm "*". The dark generation due to band-to-band tunneling via trap states may make it necessary to restrict the peak fields to even lower values. Re-triggering following a breakdown pulse, due to charge trapping or impact ionization of these traps during the avalanche, is also analysed. Optical coupling due to light emission during the avalanche iii discharges is discussed and two methods for the prevention of this coupling between the image elements in linear arrays are described. MOS gates that break down either at the Si-SiO,, interface, or in the bulk at a n-p junction created by a buried n-channel, have been fabricated and operated above breakdown. The surface breakdown devices were operated .in a charge-injection mode while the bulk breakdown devices were operated in a charge transfer mode similar to that which would occur in a full PC-CCD imager. The surface breakdown devices exhibited excessive dark count rates that were attributed to the high electric fields at the Si-SiO^ interface. The bulk breakdown detectors were found to be far superior. They had very sharply peaked pulse height distributions and considerably lower dark pulse rates. Operation up to 12 volts above breakdown with a corresponding avalanche initiation probability greater than 0.9 was possible with these devices. Only a very weak temperature dependence of the dark pulse rate was observed, suggesting that a tunneling mechanism of dark carrier generation was limiting the performance of the bulk-breakdown devices. The magnitude of ...

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Evolution and Current Status of Aluminum Metallization

Cited by 92 publications

References 140 publications

The Evolution of Silicon Semiconductor Technology: 1952–1977

The Evolution of Silicon Semiconductor Technology: 1952–1977

Semiempirical profile simulation of aluminum etching in a Cl2/BCl3 plasma

A new MOS photon-counting sensor operating in the above-breakdown regime

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