Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Matsunami, Hiroyuki; Kimoto, Tsunenobu

doi:10.1016/s0927-796x(97)00005-3

Cited by 553 publications

(331 citation statements)

References 102 publications

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“…There are six main diffraction spots (marked by circles and highlighted by red arrows) corresponding to a lattice constant of 3.1Å. This is consistent with 3C -SiC(111) which is the SiC polytype expected to grow on Si(111) at these temperatures [13]. The black arrows point out diffraction spots that, although not well-resolved, could correspond to the √ 3 × √ 3 reconstruction which has been observed for this surface [14,15].…”

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confidence: 78%

Direct growth of graphitic carbon on Si(111)

Pham

Joucken

Campos-Delgado

et al. 2013

Applied Physics Letters

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Appropriate conditions for direct growth of graphitic films on Si(111) 7×7 are investigated. The structural and electronic properties of the samples are studied by Auger Electron Spectroscopy (AES), X-ray Photoemission Spectroscopy (XPS), Low Energy Electron Diffraction (LEED), Raman spectroscopy and Scanning Tunneling Microscopy (STM). In particular, we present STM images of a carbon honeycomb lattice grown directly on Si(111). Our results demonstrate that the quality of graphene films formed depends not only on the substrate temperature but also on the carbon buffer layer at the interface. This method might be very promising for graphene-based electronics and its integration into the silicon technology.

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supporting

confidence: 78%

Direct growth of graphitic carbon on Si(111)

Pham

Joucken

Campos-Delgado

et al. 2013

Applied Physics Letters

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“…In order to overcome problems related to lattice mismatch, as in the case of 3C-SiC growth on silicon substrates, the growth may be performed on substrates of a hexagonal polytype (4H-or 6H-SiC). In this case, the 3C-SiC nucleates spontaneously on the (0001) surfaces if the temperature is below 2000 o C [1].…”

Section: Introductionmentioning

confidence: 99%

Effect of initial substrate conditions on growth of cubic silicon carbide

Vasiliauskas

Marinova

Syväjärvi

et al. 2011

Journal of Crystal Growth

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Abstract. In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H-SiC substrates preparations were used: (i) as-received, (ii) repolished, (iii) annealed and covered by silicon layer, (iv) with (111) 3C-SiC buffer layer. Almost 100% coverage and low twin density was achieved when growing on the buffer layer. The XRD and TEM characterizations show better material quality when layer is grown directly on 6H-SiC substrates.Background doping evaluated by LTPL is in the range of 10 16 cm -3 for N and 10 15 cm -3 for Al in all grown layers.

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“…However, the sequence determines the lengths and the directions of the interstitial channels, hereby affecting the shapes of the wave-functions of CBMs. The internal space overlooked in the past may be closely related to the electronic properties of the semiconductors, that we discuss in this Letter.Silicon carbide (SiC) is a promising material in power electronics due to its superior properties which are suitable to the operations under harsh environment [7]. From science viewpoints, SiC is a manifestation of the polytypes explained above: Dozens of polytypes of SiC are observed and the band gaps vary by 40 %, from 2.3 eV in 3C to 3.3 eV in 2H despite that the structures are locally identical to each other in the polytypes [8].…”

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confidence: 99%

Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors

Matsushita

Oshiyama

2014

Phys. Rev. Lett.

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We find that electron states at the bottom of the conduction bands of covalent semiconductors are distributed mainly in the interstitial channels and that this floating nature leads to the band-gap variation and the anisotropic effective masses in various polytypes of SiC. We find that the channel length, rather than the hexagonality prevailed in the past, is the decisive factor for the band-gap variation in the polytypes. We also find that the floating nature causes two-dimensional electron and hole systems at the interface of different SiC polytypes and even one-dimensional channels near the inclined SiC surface.Most semiconductors, elemental or compound, have the four-fold coordinated tetrahedral structure caused by the hybridization of atomic orbitals. It is written in textbooks [1] that the resultant hybridized sp 3 bonding orbitals constitute valence bands, whereas the anti-bonding counter parts do conduction bands. This is not necessarily true, however: We have recently found that the wavefunctions of the conduction-band minima (CBM) of the semiconductors are distributed not near atomic sites but in the interstitial channels [2], as shown in Fig. 1. The wave-functions float in the internal space, i.e., the channels, inherent to the sp 3 -bonded materials.Another structural characteristic in the semiconductor is the stacking of atomic bilayers along the bond axis direction such as AB (wurtzite) or ABC (diamond or zincblende). The different stacking sequence leads to the different polytype [6] generally labeled by the periodicity of the sequence n and its symmetry, hexagonal (H) or cubic (C), as in 2H(AB), 3C(ABC), 4H(ABCB) and so on. These differences in the stacking sequence have been assumed to be minor in the electronic properties. However, the sequence determines the lengths and the directions of the interstitial channels, hereby affecting the shapes of the wave-functions of CBMs. The internal space overlooked in the past may be closely related to the electronic properties of the semiconductors, that we discuss in this Letter.Silicon carbide (SiC) is a promising material in power electronics due to its superior properties which are suitable to the operations under harsh environment [7]. From science viewpoints, SiC is a manifestation of the polytypes explained above: Dozens of polytypes of SiC are observed and the band gaps vary by 40 %, from 2.3 eV in 3C to 3.3 eV in 2H despite that the structures are locally identical to each other in the polytypes [8]. This mysterious band-gap variation has been discussed in terms of an empirical quantity, hexagonality [9], for a half century: A bilayer sandwiched by the two same stacking indexes, as in 2H structure, is called a hexagonal layer and the ratio of the hexagonal layers in whole stacking sequence is called hexagonality; the band-gap variation in the poly- [2,5] types is argued to be linear with respect to the hexagonality. Yet, the linearity is not satisfactory (see below) and moreover the underlying physics is totally lacking.In this Letter, we find, o...

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Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Cited by 553 publications

References 102 publications

Direct growth of graphitic carbon on Si(111)

Direct growth of graphitic carbon on Si(111)

Effect of initial substrate conditions on growth of cubic silicon carbide

Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors

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