Effect of initial substrate conditions on growth of cubic silicon carbide

Vasiliauskas, Remigijus; Marinova, Maya; Syväjärvi, Mikael; Liljedahl, Rickard; Zoulis, Georgios; Lorenzzi, Jean; Ferro, Gabriel; Juillaguet, Sandrine; Camassel, Jean; Polychroniadis, Efstathios K.; Yakimova, Rositza

doi:10.1016/j.jcrysgro.2011.03.024

Cited by 28 publications

(27 citation statements)

References 28 publications

(29 reference statements)

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“…In thick (100-250 μm) 3C-SiC layers grown on Si-face we typically observe very similar region (around 2x4 mm 2 ) having a low density of TBs while in the vicinity of the good region density of TBs was much higher. This was not a single result, as similar regions were also observed earlier when growing 3C-SiC on the Si-face [10]. Thus it seems that on the Si-face the domain was formed at the beginning of growth at a low temperature, when supersaturation ratio was quite low, and with continued growth the primary 3C-SiC island has extended.…”

Section: Growth Of Cubic Sicsupporting

confidence: 49%

“…1) which are caused by stacking faults reaching the surface [10]. In contrast to TBs, SFs density on the surface of the grown material was very similar on both faces (~10 2 -10 3 cm -1 ).…”

Section: Growth Of Cubic Sicmentioning

confidence: 87%

“…In the current work the growth of 3C-SiC layers was performed by sublimation epitaxy in a vertical quartz tube reactor [10]. The two inch nominally on-axis 6H-SiC substrates with silicon (0001) and carbon   1 000 faces prepared for epitaxy were cut in quarters and further used for 3C-SiC growth.…”

Section: Methodsmentioning

confidence: 99%

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Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Vasiliauskas¹,

Juillaguet²,

Syväjärvi³

et al. 2012

Journal of Crystal Growth

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Abstract. Nucleation and subsequent growth of cubic SiC (111) on Si-and C-faces of nominally on-axis 6H-SiC substrates was investigated. More uniform nuclei and twin boundary distribution was observed when 3C-SiC was grown on the C-face. This was attributed to a lower critical supersaturation ratio. A new type of defects which appear as pits in the C-face 3C-SiC layers related to homoepitaxial 6H-SiC spiral growth was found and described. The evaluation of the growth driving force for both polar faces showed that the homoepitaxial 6H-SiC spirals were not overgrown on the C-face due to low maximum supersaturation ratio. The XRD ω-rocking characterization shows a better structural quality of the 3C-SiC was grown on the Si-face, however on the C-face the uniformity over the whole sample was higher. Unintentional doping by N (~10 16 cm -3 ) was slightly higher on the C-face while Al doping was higher (~10 14 cm -3 ) on the Si-face of the grown material, similarly to the doping of hexagonal SiC polytypes.

show abstract

Section: Growth Of Cubic Sicsupporting

confidence: 49%

“…1) which are caused by stacking faults reaching the surface [10]. In contrast to TBs, SFs density on the surface of the grown material was very similar on both faces (~10 2 -10 3 cm -1 ).…”

Section: Growth Of Cubic Sicmentioning

confidence: 87%

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Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Vasiliauskas¹,

Juillaguet²,

Syväjärvi³

et al. 2012

Journal of Crystal Growth

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“…Growth of bulk-like 3C-SiC (111) was performed by sublimation epitaxy [7]. Two samples were grown on large area (quarters of two inch) (0001) silicon face 6H-SiC substrates.…”

Section: Methodsmentioning

confidence: 99%

Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC

et al. 2012

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Abstract. Free standing 3C-SiC (111) samples with differently oriented twin boundaries were prepared using on-axis and slightly off-axis 6H-SiC substrates. The orientation of twin boundaries causes either an enhancement or suppression of the magnetoresistance mobility. The origin of carriers mobility difference is attributed to the specific structure of these defects. The height of the barriers created by twin boundaries was found to be 0.2 eV.

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“…The 3C-SiC(111) was grown by sublimation on 6H-SiC(0001) 17 and it was chemical mechanical polished by NovaSiC. The thickness of graphene was determined by LEEM to be between 2 and 7 monolayers (MLs).…”

mentioning

confidence: 99%

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Bouhafs

Stanishev

Zakharov

et al. 2016

Applied Physics Letters

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We show experimentally that few layer graphene (FLG) grown on the carbon terminated surface (C-face) of 3C-SiC(111) is composed of decoupled graphene sheets. Landau level spectroscopy on FLG graphene is performed using the infrared optical Hall effect. We find that Landau level transitions in the FLG exhibit polarization preserving selection rules and the transition energies obey a square-root dependence on the magnetic field strength. These results show that FLG on C-face 3C-SiC(111) behave effectively as a single layer graphene with linearly dispersing bands (Dirac cones) at the graphene K point. We estimate from the Landau level spectroscopy an upper limit of the Fermi energy of about 60 meV in the FLG, which corresponds to a carrier density below 2.5 × 1011 cm−2. Low-energy electron diffraction μ-LEED) reveals the presence of azimuthally rotated graphene domains with a typical size of ≤200 nm. μ-LEED mapping suggests that the azimuth rotation occurs between adjacent domains within the same sheet rather than vertically in the stack.

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Effect of initial substrate conditions on growth of cubic silicon carbide

Cited by 28 publications

References 28 publications

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Cubic SiC formation on the C-face of 6H–SiC (0001) substrates

Influence of twin boundary orientation on magnetoresistivity effect in free standing 3C–SiC

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

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