Direct growth of graphitic carbon on Si(111)

Abstract

Appropriate conditions for direct growth of graphitic films on Si(111) 7×7 are investigated. The structural and electronic properties of the samples are studied by Auger Electron Spectroscopy (AES), X-ray Photoemission Spectroscopy (XPS), Low Energy Electron Diffraction (LEED), Raman spectroscopy and Scanning Tunneling Microscopy (STM). In particular, we present STM images of a carbon honeycomb lattice grown directly on Si(111). Our results demonstrate that the quality of graphene films formed depends not only on the substrate temperature but also on the carbon buffer layer at the interface. This method might be very promising for graphene-based electronics and its integration into the silicon technology.

Thermoelectric Properties of Nanowires with a Graphitic Shell

“…[18] On the other hand, other studies have demonstrated that carbon has fast diffusivity in Si and contributes to the narrow carbon containing layer near the Si surface, even at low temperatures. [19] Therefore, further theoretical and experimental investigations are needed to fully accountf or graphitic shell growth on Si or SiO 2 NWs. From the transmission electron microscopy (TEM) images, the averaget hickness of the MLG shell on the nanowires wase stimated to be approximately 5nmw ith AE 2nm roughness.…”

Síntese E Caracterização Estrutural Do Grafeno Sobre Ge(100) Obtido Por Deposição Química Na Fase Vapor

“…O crescimento de grafeno sobre silício (Si) permitiria melhor compatibilidade com a tecnologia dominante hoje. O maior desafio para o crescimento do grafeno sobre silício é a formação de carbeto devido à baixa difusividade e a alta solubilidade do carbono no silício, tornando o crescimento do grafeno de forma direta sobre o substrato de silício muito difícil (14). Diferente do silício, o germânio (Ge) tem como característica não formar fase de carbeto estável e ser um material semicondutor intrínseco com maior mobilidade de portadores que o silício.…”