Steep Slope Field-Effect Transistors With Ag/TiO<sub>2</sub>-Based Threshold Switching Device

Song, Jeonghwan; Woo, Jiyong; Lee, Sangheon; Prakash, Amit; Yoo, Juhyun; Moon, Kibong

doi:10.1109/led.2016.2566661

Cited by 52 publications

(54 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Titania : Being paired with either Ag or Cu electrodes, TiO 2 has exhibited threshold switching in both planar structure and vertical stacks . Song et al developed a Pt/TiO 2 /Ag cell with a dielectric film grown by atomic layer deposition (ALD) and a sputtered Ag electrode, featuring bidirectional threshold switching with <10 ns transition time (see Figure d).…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Wang

Rao

Midya

et al. 2017

Adv Funct Materials

260

233

View full text Add to dashboard Cite

Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.is applied due to the formation of a conduction channel(s) with Ag or Cu atoms. Unlike the ECM cells, the resistance recovers back spontaneously upon cessation of the external bias, yielding a superior I-V nonlinearity [4][5][6][7][8][9][10][11] and unique temporal conductance evolution dynamics. [7,12,13] Such a relaxation process is due to the physical dissolution of the metallic conduction channel under driving forces such as minimization of interfacial energy. In case active metals are used as electrodes, these metals may be doped into the dielectrics eventually under the combined effect of electric fields, thermal diffusion, which may lead to a reduced threshold voltage for the subsequent switching, similar to the process called "electroforming." The unique delay and relaxation dynamics of Ag and Cu-based threshold switches make them suitable for innovative applications in circuits and systems.Threshold switches with Ag or Cu active metals are also termed as "diffusive memristors" [7] to emphasize the underlying nature of the diffusive dynamics of the metal species. Factors including bias amplitude, biasing duration, as well as ambient temperature have been observed to have an impact on such a process, showing a wide range of dynamical properties, which could be exploited as access devices for memories with fast transition (e.g., <100 ns) or synaptic emulators with a relatively slower evolution (e.g., >1 µs). We survey the recently developed material systems which have exhibited this kind of threshold switching. New evidences by electron microscopy and quantitatively thermodynamic modeling are examined to give insights into the underlying physics of the mechanisms. We also discuss applications enabled by the advent of such threshold switches. Temporal Response of the SwitchingThe dynamical response of threshold switching is a critical property for many applications but has been characterized to a lesser extent. The temporal responses could be probed by applying voltage pulses and measuring the resulting currents in the time domain. It is a general observation in both ECM and threshold switches that the conductance experienced a transition from insulating state to conducting state after a finite time duration (delay time) under the external bias, as ill...

show abstract

Section: Methodsmentioning

confidence: 99%

“…Song et al reported an electrical setup which connected the drain terminal of a transistor with a Pt/TiO 2 /Ag threshold switch as illustrated in Figure a . Figure b shows the observed I d – V d characteristics of the combined device.…”

Section: Applicationsmentioning

confidence: 99%

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Wang

Rao

Midya

et al. 2017

Adv Funct Materials

260

233

View full text Add to dashboard Cite

show abstract

“…Other selectors, such as mixed-ionic-electronic conduction (MIEC) [29][30][31] and FAST [29,30] have been reported with attractive performance but undisclosed materials. The concept of using engineered materials by doping fast diffusive species into dielectrics has recently been introduced [32] and demonstrated with improved nonlinearity and transition slope [33][34][35][36][37] . However, high operating current (e.g.…”

Section: Introductionmentioning

confidence: 99%

Anatomy of Ag/Hafnia‐Based Selectors with 10¹⁰ Nonlinearity

et al. 2017

View full text Add to dashboard Cite

A novel Ag/oxide‐based threshold switching device with attractive features including ≈1010 nonlinearity is developed. High‐resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.

show abstract

“…In this case, the Hyper-FET exhibits higher ON current than the FET and iso-delay operation can be achieved with lower supply voltages. Up to our knowledge, several Hyper-FETs have been experimentally obtained exhibiting SS around 8mV/dec [10], 5mV/dec [11] and 59mV/dec [12]. In [13], a phasechange Tunnel FET with SS=30mV/dec has been recently proposed.…”

Section: Introductionmentioning

confidence: 99%

Insights Into the Operation of Hyper-FET-Based Circuits

Avedillo

Núñez

2017

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-Devices combining transistors and phase transition materials are being investigated to obtain steep switching and a boost in the I ON /I OFF ratio and, thus, to solve power and energy limitations of CMOS technologies. This paper analyzes the operation of circuits built with these devices. In particular, we use a recently projected device called Hyper-FET to simulate different circuits, and to analyze the impact of the degraded DC output voltage levels of Hyper-FET logic gates on their circuit operation. Experiments have been carried out to evaluate power of these circuits and to compare with counterpart circuits using FinFETs. The estimated power advantages from device level analysis are also compared with the results of circuit level measurements. We show that these estimations can reduce, cancel, or even lead to power penalties in low switching and/or low frequency circuits. We also discuss relationships with some device level parameters showing that circuit level considerations should be taken into account for device design.

show abstract

Steep Slope Field-Effect Transistors With Ag/TiO₂-Based Threshold Switching Device

Cited by 52 publications

References 12 publications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Anatomy of Ag/Hafnia‐Based Selectors with 10¹⁰ Nonlinearity

Insights Into the Operation of Hyper-FET-Based Circuits

Contact Info

Product

Resources

About

Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device

Cited by 52 publications

References 12 publications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity

Insights Into the Operation of Hyper-FET-Based Circuits

Contact Info

Product

Resources

About

Steep Slope Field-Effect Transistors With Ag/TiO₂-Based Threshold Switching Device

Anatomy of Ag/Hafnia‐Based Selectors with 10¹⁰ Nonlinearity