Status review on earth-abundant and environmentally green Sn-X (X = Se, S) nanoparticle synthesis by solution methods for photovoltaic applications

Pejjai, Babu; Reddy, Vasudeva Reddy Minnam; Gedi, Sreedevi; Park, Chinho

doi:10.1016/j.ijhydene.2016.11.084

Cited by 63 publications

(18 citation statements)

References 229 publications

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“…When configured into devices, these NW detectors exhibit excellent optoelectronic characteristics with ultrahigh optical gain, controllable spectrum sensitivity, large photoresponse bandwidth, and considerable light-to-current conversion efficiency. − Among many nanomaterials, IV–VI semiconductor nanomaterials with narrow band gaps, such as SnS, − SnS 2 , , SnSe, − SnSe 2 , PbS, and PbSe, have been demonstrated with great potency for optical and optoelectronic utilizations in the infrared (IR) regime. For example, tin selenide (SnSe) is an important p-type semiconductor with indirect and direct band gaps of 0.90–1.12 and 1.30–1.55 eV, respectively, which are similar to those of typical solar cell materials ( e.g ., Si and CdTe), capable of absorbing most of the solar spectrum as ideal photovoltaic materials. − Apart from solar cells, SnSe has also attracted much attention in the application fields of storage switching devices and photodetectors. , In this regard, various SnSe nanostructures, ,,,− especially in the geometry of NWs, ,− have been extensively investigated. Particularly, Shen et al .…”

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confidence: 99%

“…At the same time, tin sulfide (SnS) is another essential p-type IV–VI semiconductor with indirect and direct band gaps of 1.2–1.5 and 1.0–1.2 eV, correspondingly. Similar to SnSe NWs, SnS NWs have also been shown with promising prospects as active components in field emitters, battery materials, gas sensors, photodetectors, − and solar cells . Until now, although a majority of the work has been focused on the synthesis of SnSe and SnS NWs, ,− very limited study on their electrical and optoelectronic properties for device applications ( e.g ., highly efficient photodetectors) has been reported.…”

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confidence: 99%

“…Similar to SnSe NWs, SnS NWs have also been shown with promising prospects as active components in field emitters, 29 battery materials, 10 gas sensors, 11 photodetectors, 30−32 and solar cells. 22 Until now, although a majority of the work has been focused on the synthesis of SnSe and SnS NWs, 29,33−35 very limited study on their electrical and optoelectronic properties for device applications (e.g., highly efficient photodetectors) has been reported. Surprisingly, it is as well found that most of the NW-based photodetector studies are primarily based on the n-type channel material.…”

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confidence: 99%

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High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

et al. 2018

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Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 10 (2.8 × 10), good responsivity of 1.0 × 10 A W (1.6 × 10 A W), and excellent detectivity of 3.3 × 10 Jones (2.4 × 10 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the p-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

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High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

et al. 2018

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“…The equivalence of SnS‐CUB and π‐SnS has been the subject of a joint work later on . The atomic arrangement, bonding scheme, and the reason for substantial thermal stability observed in the new polymorph of SnS, comparable with that of its well‐studied orthorhombic polymorph (SnS‐ORT) , were presented there. In addition to application in solar cell of SnS‐CUB, other possibilities were also suggested, arising from the lack of center‐of‐symmetry in the atomic arrangement in this CUB‐unit cell.…”

Section: Introductionmentioning

confidence: 97%

“…The period 2006–2016 saw much research effort to place SnS‐ORT or SnSe‐ORT as solar cell materials either in thin film structures or by using their nanocrystals . We consider that perspective offered by SnS and SnSe would be improved by their cubic polymorphs as well as a wide range of SnS x Se 1− x ‐CUB thin films, which may be produced from SnS‐SnSe‐CUB stacks.…”

Section: Introductionmentioning

confidence: 99%

Thin film solar cells of cubic structured SnS‐SnSe

Barrios‐Salgado

Rodríguez-Guadarrama

García

et al. 2017

Physica Status Solidi (a)

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Thin films of tin sulfide and tin selenide with a large simple cubic (CUB) crystalline structure with lattice constants of 11.5873 Å(SnS-CUB) and 11.9632 Å(SnSe-CUB) were prepared via chemical deposition and integrated into solar cell structures. Heating of SnS-SnSe-CUB layers permitted control of their optical bandgap in the interval of 1.38 eV (SnSe-CUB) and 1.7 eV (SnS-CUB). Such layers have ptype electrical conductivity 10 À3 -10 À2 V À1 cm À1 compared with 10 À6 V À1 cm À1 of SnS-CUB. Solar cells were fabricated on fluorine-doped tin oxide (FTO) glass. Thin films of CdS (80 nm), Sb 2 S 3 (30-60 nm), or Sb 2 (S-Se) 3 (60 nm) were prepared on FTO by chemical deposition. The best results on solar cells were recorded for FTO/CdS/ Sb 2 S 3 (60 nm)/SnS-Se-CUB (180 nm)/C-Ag with open circuit voltage of 496 mV; short circuit current density of 7.5 mA cm À2 ; and conversion efficiency of 1.15%, measured under solar radiation intensity of 1000 W m À2 in cell area of 0.5 cm 2 .

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Recent Advances in SnSe Nanostructures beyond Thermoelectricity

Wang

Huang

et al. 2022

Adv Funct Materials

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Layered SnSe is an emerging class of black phosphorus, which is non-toxic, eco-friendly, and chemically stable. Recently, SnSe nanostructures have triggered more research interest and enabled broad applications beyond demonstrating their great performances on thermoelectricity. However, there are also a great many significant studies of SnSe nanostructures beyond thermoelectricity. SnSe quantum dots, nanosheets, nanowires, and thin films with diverse morphologies have been synthesized using various chemical and physical preparation approaches. SnSe is a multi-phase semiconductor, and its nanostructures endow unique properties, including small electron effective mass, ultralow thermal conductivity, huge anisotropy, and the largest 2D piezoelectric coefficient ever predicted. The versatility of SnSe nanostructures can enable potential applications ranging from ultrafast photonics, logic devices, photodetectors, solar cells, photocatalysis, energy storage, and biology to more cutting-edge interdisciplinary subjects. In this review, the recent advances made in SnSe nanostructures are summarized, covering basics, synthesis, properties, and applications, just giving a passing comment on thermoelectricity. An in-depth perspective on the challenges and prospects of SnSe nanostructures toward broad and practical applications is also given.

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Status review on earth-abundant and environmentally green Sn-X (X = Se, S) nanoparticle synthesis by solution methods for photovoltaic applications

Cited by 63 publications

References 229 publications

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

Thin film solar cells of cubic structured SnS‐SnSe

Recent Advances in SnSe Nanostructures beyond Thermoelectricity

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