High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

Abstract

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 10 (2.8 × 10), good responsivity of 1.0 × 10 A W (1.6 × 10 A W), and excellent detectivity of 3.3 × 10 Jones (2.4 × 10 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the p-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

Giant‐Enhanced SnS2 Photodetectors with Broadband Response through Oxygen Plasma Treatment

“…Moreover, the stability and fast response of the illuminated O 2 ‐plasma‐treated SnS 2 suggest quicker electron–hole pairs generation and recombination activities after the plasma treatment is executed. [ 3,44–46 ] For clarity, the SnS 2 photosensing behavior schematics are displayed in Figure 5e,f, which explain the operating mechanism of its broadband photoresponse. Because of the O 2 plasma treatment, some of the intrinsic sulfur vacancies in SnS 2 are filled‐up with oxygen atoms (defects), which may have created an additional defect state above the Fermi level according to the theoretical calculations in Figure 2 and the XPS spectra in Figure 1.…”

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

“…[ 1–4 ] When incorporated into devices, these IR detectors exhibit excellent optoelectronic performance with high responsivity, fast response, good flexibility, and low energy consumption. [ 5–10 ] With this in mind, various low‐dimensional nanostructures, especially nanowires (NWs) and two‐dimensional (2D) materials, have been extensively investigated in the past few years. [ 11–16 ] For example, Hu and co‐workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively.…”

Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review

“…So far, PDs based on single crystal, film, and nanostructured materials have been applied for building designed PDs to detect ultraviolet [12][13][14], visible [15][16][17][18], or infrared [19][20][21][22][23][24][25] photons with actual needs. For example, highly narrow band (bandwidth of 10 nm) solar-blind photodetectors of β-Ga 2 O 3 single crystals with a peak responsivity of 0.23 A/W at 262 nm and an EQE of 110% were reported [26].…”

“…Indeed, the combination of long lifetime and short transit time of charge carriers can result in substantial photoconductive gain [45]. Especially, quasi-one-dimensional nanowires with semiconducting properties have been widely investigated as active materials for high-performance photodetectors [23]. It could be also explored from the published literature related to PDs that, generation, separation, transportation, and collection of photo-induced charge carrier are the key parameters for improving performance of the designed devices [12].…”