Statistical BSIM model for MOSFET 1∕f noise

Statistical variations in VCO phase noise due to upconverted MOSFET 1/f noise

“…The details of this model can be found in [2]. The bias independent model accurately predicts the device area dependence of noise variability as shown in [2]. In the following figure, we show close-in phase noise measurements, as well simulation results with the biasindependent statistical 1/f noise model.…”

“…This effectively scales the noise power regardless of gate or drain bias. The details of this model can be found in [2]. The bias independent model accurately predicts the device area dependence of noise variability as shown in [2].…”

“…RF CMOS Voltage Controlled Oscillators suffer from high levels of close-in phase noise due to the upconversion of device 1/f noise. It has been reported that a large device-to-device variation is observed in MOSFET 1/f noise [1], [2]. This variability has been shown to be due to the statistical nature of the number and spatial location of traps found in each MOSFET.…”

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

“…in large-area BJT, then both methods yield similar results, that is However, if the variations between individual spectra S i are spread over one decade or more, then the arithmetic averaging results in variation larger than the average [72], σ>S avg , it becomes impractical (because the noise is attributed to σ rather than to S avg ), and the geometric averaging is more suitable for sub-micrometer area devices, since the distribution of noise variation tends to log-normal distribution [28,29,79,80]. Therefore, many authors use geometric averaging [17,28,29,34,36,66,67,79,80,81,82]. Worth mentioning, it is empirically observed that the noise variations are better described by log-normal distribution, and substantial work is expected to explain the origin of this empirical observation [79,80].…”

Health assessment of tree trunk by using acoustic-laser technique and sonic tomography

“…In this article, the amplitude of the transformed data by F(x) is presented where x is the collected voltage signal. Since the existence of flick noise (also called 1/f noise, in the frequency zone between 0-500 Hz) can affect the signal analysis of tree defect, the signals in this range are eliminated (Erturk et al 2005(Erturk et al , 2007. Figure 7 shows the amplitude of signals in the frequency domain for intact region and defect regions with different locations.…”