Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS

Puglisi, Francesco Maria; Pavan, Paolo; Larcher, Luca; Padovani, Andrea

doi:10.1016/j.sse.2015.05.027

Cited by 15 publications

(16 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For a large CF (i.e. rCF>>λ) the CF screened section is much smaller than the CF area, SCF=π•rCF 2 , causing a relatively small resistance change [44,[48][49][50]. As the CF gets smaller, the screened portion of the CF gets comparatively wider, with a larger impact on the average relative resistance (or, equivalently, current) change, as also reported in the literature [44,[48][49][50].…”

Section: B Rtn Amplitude Statistics Model In Lrsmentioning

confidence: 51%

See 1 more Smart Citation

Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

Puglisi

Zagni

Larcher

et al. 2018

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

In this work we report about the derivation of a physics-based compact model of Random Telegraph Noise (RTN) in HfO2-based Resistive Random Access Memory (RRAM) devices. Starting from the physics of charge transport, which is different in the high and low resistive states (HRS and LRS), we explore the mechanisms responsible for RTN exploiting a hybrid approach, based on self-consistent physics simulations and geometrical simplifications. Then, we develop a simple yet effective physics-based compact model of RTN valid in both states, which can be steadily integrated in state-of-the-art RRAM compact models. The RTN compact model predictions are validated by comparison with both a large experimental dataset obtained by measuring RRAM devices in different conditions, and data reported in the literature. In addition, we show how the model enables advanced circuit simulations by exploring three different circuits for memory, security, and logic applications.

show abstract

Section: B Rtn Amplitude Statistics Model In Lrsmentioning

confidence: 51%

“…In LRS, RTN is commonly attributed to electron trapping and de-trapping at individual defect sites in the proximity of the CF [i.e. within one electron Debye length (λ)] [44,[48][49][50].…”

Section: B Rtn Amplitude Statistics Model In Lrsmentioning

confidence: 99%

Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

Puglisi

Zagni

Larcher

et al. 2018

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

show abstract

“…At these low voltages the localized currents measured correspond to Direct and/or Fowler-Nordheim Tunneling across the h-BN stack. 27,39 At around 1.9 V all forward I-V curves show a sudden increase of current, probably related to the generation of defects within the h-BN stack. When the current reaches 5.5 nA the I-V curves become horizontal, indicating that the saturation level of the CAFM has been reached.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the high Additional information can be gained from the deformation map (Figure 6c), which can be understood as the modification of the contact forces between the tip and the sample. 39 As displayed in Figure 6b, the contact forces at the BD location are governed by the charges trapped in the dielectric; therefore, a high deformation signal can be understood as a change in the amount of charges trapped in the dielectric during the measurement. It is known that the BD event in a dielectric can generate both deep and superficial traps, 47 the first type are normally immobile (also called fixed), while the second can get self de-trapped with the time and/or when another body (such as the CAFM tip) gets in contact with them.…”

Section: Resultsmentioning

confidence: 99%

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Jiang

Shi

Hui

et al. 2017

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO, HfO, AlO, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.

show abstract

“…26,27,28,29 In particular, ReRAMs based on HfO2 have been deeply studied and proved as a suitable material for memory devices. [30][31][32][33] In this article, an inkjet-printed HfO2-based ReRAM, which exhibits very high-performance and low-power consumption in addition to self-compliance current, is presented and characterized from device level to nanoscale structure, respectively by means of electrical measurements and direct microscopy observation. The switching mechanism and the effect of the electrode material and its implications on the device features are analyzed in detail.…”

mentioning

confidence: 99%

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO₂-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

Vescio

Martín

Crespo-Yepes

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The increasing demand for flexible, wearable and transparent devices has been stimulated by the irruption of the Internet-of-Things (IoT), 1 where electronic applications are, at any time and everywhere, responsive to and communicating with the whole environment by means of a wireless network. 2 Considering the horizon of IoT and the existing requirement for pervasive computing and sensing, the low-cost manufacturing of low-power consumption electronic objects, as well as the properties of flexibility and/or wereability, can be achieved by means of printing technologies. [3][4][5] During the last decade, printing processes have progressed from a design and patterning technique to highly-precise and scalable solutions for the deposition of disrupting materials for low-cost electronic applications onto a large-area flexible substrate. [4][5][6][7][8] The strong development of rising printing technologies, like inkjet printing, is providing new opportunities to cheaply fabricate electronic devices and circuits. 9,10 Despite its low device performance when compared to conventional CMOS parameters, 11 inkjet-printing exhibits increased potentiality when applied to the development of non-volatile memory (NVM) elements for data storage. 12,13 Amongst the existing NVM technologies that have been proposed to date, phase-change random access memory (PCRAM), 14 ferroelectric RAM (FERAM) 15 or magnetoresistive RAM (MRAM) 16 have demonstrated to fulfill the general performance requirements for memory devices. 17 In addition, several two-terminal small-size resistive random access memory (ReRAM) devices have become a disruptive technology because of their simplicity and outstanding compatibility with the CMOS manufacturing technology. 18 So far, a wide range of materials exists that are suitable building blocks for memory applications, such as organic insulators (mainly polymers), 19 graphene oxide, 20 amorphous silicon, 21 chalcogenides (selenides and tellurides), 22 carbon nanotubes, 23 perovskite oxides, 24 and binary transition metal oxides. 25 Critical parameter specifications, common to all the mentioned

show abstract

Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS

Cited by 15 publications

References 33 publications

Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO₂-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

Contact Info

Product

Resources

About

Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS

Cited by 15 publications

References 33 publications

Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

Contact Info

Product

Resources

About

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO₂-Based Resistive Random Access Memory: From Device to Nanoscale Characterization