Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

Abstract

In this work we report about the derivation of a physics-based compact model of Random Telegraph Noise (RTN) in HfO2-based Resistive Random Access Memory (RRAM) devices. Starting from the physics of charge transport, which is different in the high and low resistive states (HRS and LRS), we explore the mechanisms responsible for RTN exploiting a hybrid approach, based on self-consistent physics simulations and geometrical simplifications. Then, we develop a simple yet effective physics-based compact model of RTN valid in both states, which can be steadily integrated in state-of-the-art RRAM compact models. The RTN compact model predictions are validated by comparison with both a large experimental dataset obtained by measuring RRAM devices in different conditions, and data reported in the literature. In addition, we show how the model enables advanced circuit simulations by exploring three different circuits for memory, security, and logic applications.

Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

“…Filamentary conduction through CFs is the most common operation mechanism: it is based on the stochastic formation and destruction processes of ohmic conductive filaments that shunt the electrodes 1,2,5,6,7,11,12,13,14,15 . These processes are linked to localized high temperature regions (generated by Joule heating) in which thermally based mechanisms are triggered 11,16,17 .…”

New method to analyze random telegraph signals in resistive random access memories

“…In memory applications, these fluctuations can cause severe operation or read errors. On the other hand, this RTN fluctuations in resistive RAMs can be used as an entropy source of random number generators [33][34][35] . [36][37][38][39] .…”

A Memristive Switching Uncertainty Model

“…Manifestations of noise attributed to telegraph noise (RTN) and random walk have indeed been researched before in the context of resistive memories [9][10][11]. In [12] the authors present a way to model RTN in RRAM devices with highly quantised resistive states as well translate its implications to circuit design. Noise effects were also taken into consideration This work has been supported by the EPSRC EP/R024642 and EP/K017829/1 programme grants and the National Science Centre of Poland grant 2015/17/B/ST7/03763.…”