The use of two dimensional (2D) materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academy and industry. While the research on 2D metallic and semiconducting materials is well established, the knowledge and 2 applications of 2D insulators are still very scarce. In this report we study the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h-BN) using different electrode materials, and we engineer a family of h-BN based resistive random access memories with tunable capabilities.The devices show the coexistence of forming-free bipolar and threshold type RS with low operation voltages down to 0.4 V, high current on/off ratios up to 10 6 , long retention times above 10 hours, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h-BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which is more abundant at the GBs. To the best of our knowledge, h-BN is the first 2D material showing the coexistance of bipolar and threshold RS, which may open the door to additional functionalities and applications.Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

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