Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

Borchert, B.; Egorov, A. Yu.; Illek, S.; Riechert, H.

doi:10.1109/68.849055

Cited by 64 publications

(15 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7,8 The inserted GaInNAs layer increases the effective width of the QW, shifting the spectrum towards longer wavelengths as desired, but because it leaves high strain at the QW walls, misfit dislocations are readily formed at high temperatures during device fabrication or laser operation.…”

Section: Effects Of Insertion Of Strain-mediating Layers On Luminescementioning

confidence: 99%

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Pavelescu

Peng

Jouhti

et al. 2002

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Section: Effects Of Insertion Of Strain-mediating Layers On Luminescementioning

confidence: 99%

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Pavelescu

Peng

Jouhti

et al. 2002

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…This values are similar to other previous published results for GaInNAs single quantum well laser. 20 To test the maximum modulation bandwidth measured, direct modulation at 6Gbps has been applied. Fig.…”

Section: Small Signal Modulation Bandwidthmentioning

confidence: 99%

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

et al. 2005

View full text Add to dashboard Cite

The potential of 1.3µm GaInNAs SQW laser diodes for high speed operation is experimentally investigated in this paper, computing the differential gain, dg/dn, at a temperature range suitable for most network applications (293K -348K) and the small signal modulation bandwidth. The investigation begins with a basic characterization calculating the T 0 , with a value of 56K in a range of temperatures of 293K -318K. The lasing wavelength at 293K is found to be 1250nm with a linear temperature dependence of 0.377nm/K. Secondly, the paper presents a detailed study of the modulation bandwidth of the device, obtaining a value of 6.06Ghz for the maximum modulation bandwidth at 293K with a modulation efficiency of 0.64GHz/ √ mA. In a range of temperatures of 293K -318K, the modulation bandwidth is found to decrease only slightly with the temperature with a slope of 0.0088Ghz/K. Finally, the paper explains the temperature behaviour obtained for the modulation bandwidth studying the temperature dependence of the differential gain, dg/dn. For this evaluation, the value of the differential gain with the current (how the peak gain changes with the sub-threshold bias current applied to the sample), dg/dI, is obtained using the Hakki-Paoli method. 1 Quasi-linear temperature dependence of this value has been obtained with a slope of 3.377cm −1 A −1 /K. Using impedance measurements, a relation between the carrier density, n, and the bias current applied to the laser, I, has been obtained. With this relation, we obtained the differential current with the carrier density, dI/dn. Then, we calculated the differential gain dg/dn = dg/dI · dI/dn. At 293K, the differential gain a value of 1.55 · 10 −15 cm 2 . To conclude we saw how the differential gain, dg/dn, has been found to have similar temperature behaviour as the small signal modulation bandwidth.

show abstract

“…The [AsH ]/III ratio was in excess of 100 for the InGaAs-active laser structures, but was reduced ([AsH ]/III [10][11][12][13][14][15][16][17][18][19][20] for the incorporation of nitrogen in the InGaAsN structures. Trimethylgallium (TMGa), trimethylaluminum (TMAl), and trimethylindium (TMIn) are used as the group III sources.…”

Section: Mocvd Growth Studiesmentioning

confidence: 99%

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Tansu

Chang

Takeuchi

et al. 2002

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Abstract-Characteristic temperature coefficients of the threshold current ( 0 ) and the external differential quantum efficiency ( 1 ) are studied as simple functions of the temperature dependence of the physical parameters of the semiconductor lasers. Simple expressions of characteristics temperature coefficients of the threshold current ( ) and the external differential quantum efficiency ( 1 ) are expressed as functions as physical parameters and their temperature dependencies. The parameters studied here include the threshold ( th ) and transparency ( tr ) current density, the carrier injection efficiency ( inj ) and external ( ) differential quantum efficiency, the internal loss ( ), and the material gain parameter ( ). The temperature analysis is performed on low-threshold current density ( = 1.17-1.19 m)InGaAs-GaAsP-GaAs quantum-well lasers, although it is applicable to lasers with other active-layer materials. Analytical expressions for 0 and 1 are shown to accurately predict the cavity length dependence of these parameters for the InGaAs active lasers.

show abstract

Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

Cited by 64 publications

References 11 publications

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Contact Info

Product

Resources

About

Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

Cited by 64 publications

References 11 publications

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ &lt; 1.17 μm) quantum-well lasers

Contact Info

Product

Resources

About

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers