Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Pavelescu, E.‐M.; Peng, C.S.; Jouhti, T.; Konttinen, J.; Li, W.; Pessa, M.; Dumitrescu, M.; Spanulescu, S.

doi:10.1063/1.1470223

Cited by 70 publications

(36 citation statements)

References 17 publications

(13 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6,7 The introduction of strain-compensated GaNAs layers between GaInNAs and GaAs appears to be an effective approach to relieving the difficulty, 8 but for 1.55 m structures the increased stress at the interface between GaNAs and GaInNAs has proven unfavorable for the interface quality. 9 Additional insertion of strain-mediated GaIn͑N͒As layers is feasible for the improvement of interface quality and photoluminescence efficiency, 10,11 but this again increases the total compressive strain in the whole structure and is thus undesirable for the growth of multiQWs. Recently several groups have employed antimony as a surfactant to assist the growth of GaInNAs and succeeded in the realization of 1.55 m photoluminescence ͑PL͒ and lasing at room temperature, [12][13][14][15] but there has been very little investigation into the effect of Sb on the optical and structural properties.…”

mentioning

confidence: 99%

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

Sun

Calvez

Dawson

et al. 2005

Applied Physics Letters

View full text Add to dashboard Cite

Access and use of this website and the material on it are subject to the Terms and Conditions set forth at NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744131&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744131&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca.

show abstract

mentioning

confidence: 99%

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

Sun

Calvez

Dawson

et al. 2005

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…2). The optimal growth temperature is lower than for ~35% In-content GaInNAs [2,4], since lower temperature is needed to prohibit strain relaxation. …”

Section: Resultsmentioning

confidence: 99%

“…It is known that incorporation of nitrogen to InGaAs can decrease the material bandgap dramatically while it will degrade crystal quality and increase nonradiative recombination. For long wavelength emission, more indium and less nitrogen are desirable in QW design considerations [3,4]. ~35% In and ~2% N is the most chosen in practice to avoid strain relaxation.…”

Section: Introductionmentioning

confidence: 99%

1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Niu

Zhang

et al. 2006

Phys. Status Solidi (c)

View full text Add to dashboard Cite

High structural and optical quality 1.3 µm GaInNAs /GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn 0.425 NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In 0.425 GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellösung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs.

show abstract

“…IR lasers, detector, solar cells) [2][3][4][5][6][7]. Lattice matched Ga 1-y In y N x As 1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices.…”

mentioning

confidence: 99%

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Bhusal

Freundlich

2006

MRS Proc.

View full text Add to dashboard Cite

Power conversion in thermophotovoltaic (TPV) or any other photovoltaic device can be increased by implementing monolithically series connected multi-bandgap structure in the device. The main concern for multi-bandgap material is the availability of different band gaps for the optimal operation of the device. Based on the recent work, GaAsN/InAsN superlattice lattice matched to InP has shown the potential of achieving band gaps in the range of 0.65-0.35eV at 300K, which is technologically important range for the TPV structure due to the availability of the photon energies in this range from the heat source. In this work, we will present the calculation details and results to find the maximum power generated by the multi-bandgap monolithically series connected devices. Optimized band gaps for p-i-n junction subcells were estimated by finding the optimal current to provide the maximum power through the series-connected double, triple and quadruple junction cells for 1350K blackbody radiation as an incident flux.

show abstract

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Abstract: Structural and optical properties of near-surface GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm Appl.

Cited by 70 publications

References 17 publications

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Contact Info

Product

Resources

About