Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices

Bauer, F.; Stockmeier, T.; Lendenmann, H.; Dettmer, H.; Fichtner, W.

doi:10.1109/ispsd.1992.991231

Cited by 20 publications

(2 citation statements)

References 5 publications

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“…The switching behaviour and the latch up phenomenon of IGBT device have been analyzed in [3], [4] and [5]. But the works mentioned above were made with single switch IGBT devices and the attention was mostly paid to the turn off behaviour of the devices.…”

Section: Introductionmentioning

confidence: 99%

dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules

Held

Umbricht

et al. 1994

Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94

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A reliability investigation of 1200V/400A halfbridge IGBT modules by switching test is reported in this paper. Latch up failure was observed in the un-tested part of IGBT modules, which resulted in catastrophic craterlike melting pits in emitter bonding pads and then the tested part of IGBT modules was destroyed by very high power dissipation. Fast turn on due to a small gate resistance caused a high dvldr (about 4000V/ps) which triggered the latching failure.

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Section: Introductionmentioning

confidence: 99%

dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules

Held

Umbricht

et al. 1994

Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94

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“…Over the past decade, the voltage blocking ability of IGBT modules increased from a relatively low range of several hundreds volts up to a high level exceeding two thousand volts. With blocking voltage up to 3000 V and 2000A current handling ability, IGBT modules are competing with GTO (Gate Turn-on Thyristor) at the lower voltage end of GTO application territory [I] [2] [3].…”

Section: Introductionmentioning

confidence: 99%

A study of EOS failures in power IGBT modules

Wu²,

Zhang³

et al.

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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The influences of electrical overstress (EOS) on the reliability of power insulated gate bipolar transistor (IGBT) modules were investigated by switching, frequency, and blocking tests. This paper reports the test results and the failure analysis results. Some conclusions, from the point of IGBT application reliability view, are also provided in this paper. ' This work was partly supported by National Natural Science Foundation of China (69696035). 0-7803-4306-9/98/510.00 1998 IEEE

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Silicon MCT

Baliga

2011

Advanced High Voltage Power Device Concepts

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Static and dynamic characteristics of high voltage ( 3.5 kV ) IGBT and MCT devices

Cited by 20 publications

References 5 publications

dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules

dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules

A study of EOS failures in power IGBT modules

Silicon MCT

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