State of the art in the modelling of SiC sublimation growth

Pons, M.; Anikin, M. M.; Chourou, K; Dedulle, Jean-Marc; Madar, R.; Blanquet, Elisabeth; Pisch, A.; Bérnard, C.; Grosse, Philippe; Faure, C; Basset, G.; Grange, Y.

doi:10.1016/s0921-5107(98)00439-5

Cited by 52 publications

(26 citation statements)

References 25 publications

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“…On both processes [32][33][34][35], some modeling trends were largely reported combined with experimental results obtained in our research's groups.…”

Section: High Power Electronics: Stability Of Sic In H2 Atmospherementioning

confidence: 66%

Thermodynamics Simulations Applied to Gas-Solid Materials Fabrication Processes

Blanquet¹,

Nuta²

2012

Thermodynamics - Fundamentals and Its Application in Science

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“…On both processes [32][33][34][35], some modeling trends were largely reported combined with experimental results obtained in our research's groups.…”

Section: High Power Electronics: Stability Of Sic In H2 Atmospherementioning

confidence: 66%

Thermodynamics Simulations Applied to Gas-Solid Materials Fabrication Processes

Blanquet¹,

Nuta²

2012

Thermodynamics - Fundamentals and Its Application in Science

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“…Our results presented in Section 3 show that, for the geometry of Ref. [3], neglecting the anisotropy of the insulation's thermal conductivity can lead to an overestimation of 70 K in the temperature at the crystal seed's surface, or, when controlling the temperature, to an underestimation of 800 W in the required heating power.…”

Section: Introductionmentioning

confidence: 89%

Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS

Geiser

Klein

Philip

2007

Journal of Crystal Growth

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We present numerical computations of the temperature fields in axisymmetric growth apparatus for sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). The results are computed using our software WIAS-HiTNIHS, the WIAS High Temperature Numerical Induction Heating Simulator; pronunciation: $hit-nice, by solving the energy balance in the entire growth apparatus, taking into account the heat conduction in the solid parts as well as in gas cavities, and also accounting for the radiative heat transfer between the surfaces of the gas cavities. The insulation in a PVT growth apparatus usually consists of graphite felt, where the fibers are aligned in one particular direction, resulting in an anisotropic thermal conductivity. We show that neglecting this anisotropy can overestimate the SiC crystal's temperature by 70 K or underestimate the required heating power by 800 W. r

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“…Seeded sublimation growth technique (modified Lely method) has been widely used to produce SiC and AlN crystals since 1970s [1,2]. Many investigators studied the growth process of SiC crystals by numerical simulation method [3][4][5][6][7][8][9][10][11][12]. Hofmann et al [3,4] developed a numerical process model based on a finite volume scheme FASTEST to simulate the heat transfer in a 2 in SiC growth set-up, and demonstrated the flow field in the growth chamber caused by the buoyancy effect.…”

Section: Introductionmentioning

confidence: 99%

“…Hofmann et al [3,4] developed a numerical process model based on a finite volume scheme FASTEST to simulate the heat transfer in a 2 in SiC growth set-up, and demonstrated the flow field in the growth chamber caused by the buoyancy effect. Pons et al [5,6] used a finite element code Flux-Expert to calculate the electromagnetic field and temperature distribution. Selder et al [7] simulated the heat and mass transfer and compared the calculated growth rates with the experimental data.…”

Section: Introductionmentioning

confidence: 99%

Application of flow-kinetics model to the PVT growth of SiC crystals

Chen

Yan

Prasad

2007

Journal of Crystal Growth

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A 2-D flow-kinetics model for the PVT growth has been used to describe the phenomena of multi-phase flow, mass transfer and kinetics in the growth process of SiC crystals. The model couples the 2-D gas flow calculations and the growth kinetics at the crystal interface. We calculated the axisymmetric flow field and species concentration field as well as growth rate profile by a finite volume-based code. Species transfer in the cavity is dominated by the diffusion at growth pressures of 8-14 kPa. Supersaturation at the crystal interface is less than 1 Pa at growth pressures of 8-14 kPa. r

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State of the art in the modelling of SiC sublimation growth

Cited by 52 publications

References 25 publications

Thermodynamics Simulations Applied to Gas-Solid Materials Fabrication Processes

Thermodynamics Simulations Applied to Gas-Solid Materials Fabrication Processes

Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS

Application of flow-kinetics model to the PVT growth of SiC crystals

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