Application of flow-kinetics model to the PVT growth of SiC crystals

Chen, Qi-Sheng; Yan, Junyi; Prasad, V.

doi:10.1016/j.jcrysgro.2006.11.186

Cited by 11 publications

(9 citation statements)

References 15 publications

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“…In this study, the argon was used as the carrier gas for dilution, and its concentration was modified to control the pressure in the chamber. Meanwhile, the dilution effect from the argon gas resulted in the neglect of Stefan flow [12], and thus the fluid flow in the system was described as followed (the continuum equation and the Navier-Stokes equations [13,14]):…”

Section: Methodsmentioning

confidence: 99%

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200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

Tan¹,

Kang²,

Yin³

et al. 2022

Phys. Scr.

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200-mm silicon carbide bulk growth would be the mainstream in industrial production, but the difficulty of multiple physical fields control is increased with the larger diameter. In this study, a resistance heating based physical vapour transport system was established and explored for its appropriate parameters of multiple physical fields (such as thermal, velocity, flux and reaction components fields) by the COMSOL simulation. A combination of pressure at 5 torr and seed temperature of 2340 K was gained by taking the rate and homogeneity of in-plane growth into consideration. Furthermore, a gas deflector was designed to decrease the convection and to improve the homogeneity of mass transport. This gas deflector had the ability to enhance the quality and yield of 200-mm SiC crystal bulk. A high yield of 90.1 % was achieved for the 200-mm part within the crystal thanks to this deflector (without the usage of the deflector was 38.5 %). This work provides a useful tool and insights into the steps required for the optimisation of 200-mm or larger size SiC bulk growth.

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Section: Methodsmentioning

confidence: 99%

“…The boundary conditions of powder surface and seed crystal are determined by the Hertz-Knudsen formula [13]:…”

Section: Methodsmentioning

confidence: 99%

200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

Tan¹,

Kang²,

Yin³

et al. 2022

Phys. Scr.

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“…to analyze temperature fields [3,[6][7][8][9], crystal growth processes [10][11][12], and thermal stresses [13] as the SiC grows. These parameters are meaningful to optimize the process of crystal growth.…”

Section: With the Development Of Computer Technology Numerical Simulmentioning

confidence: 99%

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

et al. 2018

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Three-dimensional numerical simulation platform for silicon carbide crystal growth furnace was established using C programing language, where a physical model of the furnace was built based on cylindrical coordinates; governing equations for electromagnetic and temperature fields were discretized by finite volume method; radiation characteristics were studied with the help of S2S model (surface to surface radiation model); and the least distance method was proposed to check radiation faces visibility efficiently. LU decomposition algorithm based on graphic processing unit (GPU) technology was developed to accelerate the solving process of surface to surface radiation. Then the radiation heat transfer in silicon carbide crystal (SiC) growth chamber and temperature field of silicon carbide growth furnace were studied quantificationally at I = 1250 A and F = 16 kHz. The effects of coil structures (axisymmetric and spiral) on temperature field and its gradient distributions were investigated by standard deviation method. The simulation results demonstrate that spiral electromagnetic coil generates non-axisymmetric temperature field easily; the radiation heat flux is 10 2~1 0 3 times more than conduction heat flux, radiation heat transfer is helpful to increase temperature evenness; the spiral temperature field on the SiC crystal cross-section reduces the poor homogeneity of temperature gradient, which will cause crystal to generate large defects.

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“…Muller et al [4,5] simulated the temperature distribution in the growth system, it is shown that the temperature in the powder is highly non-uniform and the radial variations of 30-50 K were observed along the powder surface. Chen et al [6][7][8][9][10] developed a 2-D coupled flow-kinetics model for the PVT growth of SiC crystal. The model couples calculations of the 2-D gas flow and the growth kinetics at the crystal interface.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the thermal design in the SiC PVT growth process

Yan

Chen

Jiang

et al. 2014

Journal of Crystal Growth

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a b s t r a c tThe physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.

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Application of flow-kinetics model to the PVT growth of SiC crystals

Cited by 11 publications

References 15 publications

200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils

Improvement of the thermal design in the SiC PVT growth process

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