Stacking fault energy and ionicity of cubic III–V compounds

Gottschalk, H.; Patzer, G.; Alexander, H.

doi:10.1002/pssa.2210450125

Cited by 293 publications

(96 citation statements)

References 29 publications

(7 reference statements)

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“…For example, a resolution of a few nanometers allowed for a determination of Burgers vectors [4], the weak beam technique pushed TEM resolution towards one nm and revealed splitting of dislocations into partials [5][6][7], High Resolution TEM allowed for imaging of dislocation cores with near atomic resolution (~ 0.2 nm) [8], kinks on individual partial dislocations could be studied in a plane view configuration by imaging with forbidden reflections [9], and Scanning TEM in combination with Electron Energy Loss Spectroscopy (EELS) accesses impurity segregation at dislocation cores and their local electronic structure [10]. Resolution in electron microscopy has reached by now sub Ångstrom values [11,12].…”

Section: Introductionmentioning

confidence: 99%

Sub-angstrom imaging of dislocation core structures: how well are experiments comparable with theory?

Kisielowski

Freitag²,

et al. 2006

Philosophical Magazine

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During the past 50 years Transmission Electron Microscopy (TEM) has evolved from an imaging tool to a quantitative method that approaches the ultimate goal of understanding the atomic structure of materials atom by atom in three dimensions both experimentally and theoretically. Today's TEM abilities are tested in the special case of a Ga terminated 30 degree partial dislocation in GaAs:Be where it is shown that a combination of highresolution phase contrast imaging, Scanning TEM, and local Electron Energy Loss Spectroscopy allows for a complete analysis of dislocation cores and associated stacking faults. We find that it is already possible to locate atom column positions with picometer precision in directly interpretable images of the projected crystal structure and that chemically different elements can already be identified together with their local electronic structure. In terms of theory, the experimental results can be quantitatively compared with ab initio electronic structure total energy calculations. By combining elasticity theory methods with atomic theory an equivalent crystal volume can be addressed. Therefore, it is already feasible to merge experiments and theory on a picometer length scale. While current experiments require the utilization of different, specialized instruments it is foreseeable that the rapid improvement of electron optical elements will soon generate a next generation of microscopes with the ability to image and analyze single atoms in one instrument with deep sub Ångstrom spatial resolution and an energy resolution better than 100 meV.

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Section: Introductionmentioning

confidence: 99%

Sub-angstrom imaging of dislocation core structures: how well are experiments comparable with theory?

Kisielowski

Freitag²,

et al. 2006

Philosophical Magazine

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“…Using ϭ32.5 GPa, ϭ0.31, b ϭ4 Å, and ␥ϭ55 mJ/m 2 , 14 we repeat the plot with changing L. In this way, L M ϭ180 Å is determined. Consequently, if the distance between the two upper partials is less than L M , the interaction takes place.…”

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confidence: 99%

Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures

Zou

Cockayne

1996

Applied Physics Letters

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“…Furthermore, we found the distorted InP crystal growth could not be solved by lowering the growth rates. In addition to the growth-induced planar defects mentioned above, low SF energy of InP favors the dissociation of threading dislocations into SFs [24]. The 3.7% lattice mismatch between InP and Ge introduces high density of threading dislocations.…”

Section: Resultsmentioning

confidence: 99%

“…The 3.7% lattice mismatch between InP and Ge introduces high density of threading dislocations. Some of them dissociate into pairs of partial threading dislocations bounded by SFs [24]. The dissociation of threading dislocations into SFs is determined by thermodynamics and occurs in trenches of both orientations.…”

Section: Resultsmentioning

confidence: 99%

Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

Wang

Leys

Nguyen

et al. 2011

Journal of Crystal Growth

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In this work, we report the selective area epitaxial growth of high quality InP in shallow trench isolation (STI) structures on Si (0 0 1) substrates 61 miscut toward (1 1 1) using a thin Ge buffer layer. We studied the impact of growth rates and steric hindrance effects on the nano-twin formation at the STI side walls. It was found that a too high growth rate induces more nano-twins in the layer and results in InP crystal distortion. The STI side wall tapering angle and the substrate miscut angle induced streric hindrance between the InP facets and the STI side walls also contribute to defect formation. In the [ 1 0] orientated trenches, when the STI side wall tapering angle is larger than 10°, crystal distortion was observed while the substrate miscut angle has no significant impact on the InP defect formation. In the [ 1 0] trenches, both the increased STI tapering angle and the substrate miscut angle induce high density of defects. With a small STI tapering angle and a thin Ge layer, we obtained extended defect free InP in the top region of the [1 1 0] trenches with aspect ratio larger than 2.

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Stacking fault energy and ionicity of cubic III–V compounds

Cited by 293 publications

References 29 publications

Sub-angstrom imaging of dislocation core structures: how well are experiments comparable with theory?

Sub-angstrom imaging of dislocation core structures: how well are experiments comparable with theory?

Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures

Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

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