Stable Multidomain Structures Formed in the Process of Magnetization Reversal in GaMnAs Ferromagnetic Semiconductor Thin Films

Shin, Dongjo; Chung, Sunjae; Lee, Sanghoon; Liu, X.; Furdyna, J. K.

doi:10.1103/physrevlett.98.047201

Cited by 65 publications

(30 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recent experiments showed evidence of a formation of multidomain structures in the magnetic reversal process in extended ͑Ga,Mn͒As films. 29 Zero-spin signals would be also observed if magnetization vectors of injector and detector were mutually orthogonal. We did try to check this by performing Hanle experiments According to the theory the orthogonal configuration should result in a Hanle signal antisymmetric in B z with a zero value at B z =0.…”

Section: T=42k (A)mentioning

confidence: 99%

Electrical spin injection and detection in lateral all-semiconductor devices

et al. 2009

View full text Add to dashboard Cite

Both electrical injection and detection of spin-polarized electrons are demonstrated in a single wafer allsemiconductor GaAs-based lateral spintronic device, employing p + -͑Ga, Mn͒As/ n + -GaAs ferromagnetic Esaki diodes as spin aligning contacts. Spin-dependent phenomena, such as spin precession and spin-valve effect, are observed in nonlocal signal and the measurements reveal the unusual origin of the latter in the investigated devices. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunneling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the value of 50%.

show abstract

Section: T=42k (A)mentioning

confidence: 99%

Electrical spin injection and detection in lateral all-semiconductor devices

et al. 2009

View full text Add to dashboard Cite

show abstract

“…1(a), is based on the switching of magnetization between two nearly-orthogonal magnetic easy axes (i.e., between directions near the <100> crystal axes), at which maximum and minimum values of PHR occur 10, 14 . The process of these magnetization transitions in our Hall device must be carefully investigated at different current values, since the current flow during the measurement generates significant Joule heating, and thus affects the magnetic anisotropy of the GaMnAs layer, which is a sensitive function of temperature 15–19 .…”

Section: Resultsmentioning

confidence: 99%

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes

Lee

Bac

Choi

et al. 2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

show abstract

“…Specially, planar Hall effect (PHE) measurements on the GaMnAs with in-plane easy axes revealed detail information on the magnetic anisotropy [12,13], which governs the magnetization reversal process in the material. Despite of such intense study on the properties related with the magnetization reversal process in the GaMnAs, the investigation of magnetization processes itself has not drawn serious attention.…”

Section: Introductionmentioning

confidence: 99%