Monitoring of magnetization processes in GaMnAs ferromagnetic film by electrical transport measurement

Shin, Dongjo; Lee, Sanghoon; Liu, X.; Furdyna, J. K.

doi:10.1016/j.jcrysgro.2008.09.109

Cited by 2 publications

(1 citation statement)

References 18 publications

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“…1(b) represents the temperature dependence of the resistance in our Hall device measured with a current density of 20 µA, which is small enough not to generate any detectable Joule heating during the measurement. The temperature scan of the resistance in a 1000 Oe field shows a typical behavior of a GaMnAs layer, which exhibits a maximum resistance near the ferromagnetic transition temperature 15 , 20 .…”

Section: Resultsmentioning

confidence: 97%

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes

Lee

Bac

Choi

et al. 2017

Sci Rep

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We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

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Section: Resultsmentioning

confidence: 97%