Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

Shih, Pao-Chuan; Rughoobur, Girish; Engel, Zachary; Ahmad, Habib; Doolittle, W. Alan; Akinwande, Akintunde I.; Palacios, Tomás

doi:10.1109/led.2022.3184996

Cited by 9 publications

(4 citation statements)

References 28 publications

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“…Sometimes, this tilted angle evaporation has been applied to form various structures. One example is the Spindt-type device, one of the key device structures for vacuum field emission. − The device uses this method to form a vertical sharp tip electrode for electron emission into a vacuum. ,− The tilted evaporation is used to form a very thin sacrificial layer for the lift-off process. The tilted angle evaporation has generally a poor step coverage and shadow effect, and we tried to use these in reverse for the nano vacuum sealing process.…”

Section: Resultsmentioning

confidence: 99%

“…Quantum mechanical tunneling is a good candidate solution. 7,8 A tunneling device has an ultrathin potential barrier so that electrons can penetrate the potential barrier. Thus, it can show high operating speed, a sub−60 mV/decade subthreshold swing, low operating voltage, and high current efficiency.…”

mentioning

confidence: 99%

“…Device operating mechanisms and designs should be considered to withstand these extreme conditions. Quantum mechanical tunneling is a good candidate solution. , A tunneling device has an ultrathin potential barrier so that electrons can penetrate the potential barrier. Thus, it can show high operating speed, a sub–60 mV/decade subthreshold swing, low operating voltage, and high current efficiency. − Usually, an oxide material or a semiconductor is used as the tunneling barrier. − However, in this case, some issues still remain, such as electron trap and scattering due to the defects in the barrier.…”

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confidence: 99%

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Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

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A nano vacuum tube which consists of a vacuum transistor and a nano vacuum chamber was demonstrated. For the device, a vacuum region is an electron transport channel, and a vacuum is a tunneling barrier. Tilted angle evaporation was studied for the formation of the nano level vacuum chamber structure. This vacuum tube was ultraminiaturized with several tens of 10–18 L scale volume and 10–6 Torr of pressure. The device structure made it possible to achieve a high integration density and to sustain the vacuum state in various real operations. In particular, the vacuum transistor performed stably in extreme external environments because the tunneling mechanism showed a wide range of working stability. The vacuum was sustained well by the sealing layer and provided a defect-free tunneling junction. In tests, the high vacuum level was maintained for more than 15 months with high reliability. The Al sealing layer and tube structure can effectively block exposed light such as visible light and UV, enabling the stable operation of the tunneling transistor. In addition, it is estimated that the structure blocks approximately 5 keV of X-ray. The device showed stable operating characteristics in a wide temperature range of 100–390 K. Therefore, the vacuum tube can be used in a wide range of applications involving integrated circuits while resolving the disadvantages of a large volume in old vacuum tubes. Additionally, it can be an important solution for next-generation devices in various fields such as aerospace, artificial intelligence, and THz applications.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

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“…For excellent field emitters, it is anticipated that applying a relatively small operational voltage (0.35 V µm −1 ) could produce high emission current density (10 µA cm −2 ) [14]. Recently, nano-size field emitters made of pure metals (Cu, Mo, W, Ti and Ir), alloys (Cu-Li and Cu-Au), transition metal carbides, carbon (carbon nanotubes, graphene and diamond), semiconductors (ZnO, Si and AlGaN) and hybrid core-shell materials have been extensively investigated experimentally for their use as high-performance electron emission sources [15][16][17][18][19][20][21][22][23][24][25][26]. Compared to micro-or macro-size emitters, the nanoemitter possesses several unique properties.…”

Section: Introductionmentioning

confidence: 99%

Atomic structure evolution and linear regression fitting models for pre-breakdown electric field strength of FCC, BCC and HCP metal nano-emitters under high electric field from PIC-ED–MD simulations

Gao

Zha

et al. 2023

J. Phys. D: Appl. Phys.

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The multi-scale and multi-physics simulations are carried out for the nano-emitters consisting of FCC (Al, Cu and Au), BCC (V, Mo and W) and HCP (Ti, Zn and Zr) metals, using the hybrid electrodynamics coupled with molecular dynamics-particle in cell simulations (PIC-ED-MD). We show that the tilting of nano-emitter at low temperature and small electric field (E-field) is mainly caused either by the movement of partial dislocations at the apex of nanotip or by the elastic local distortions of atomic registries away from their ideal lattice sites (FCC/BCC/HCP). At high E-field, the intense resistive heating due to the strong electron emission leads to the directly melting of the apex of nano-emitters. For nano-emitters consisting of low melting point metals such as Al, Zn and Au, the thermal runaway is driven by the elongation, thinning, and necking of the molten region. Meanwhile, the elongation, thinning, and sharpening produce the nano-protrusion at the apex of metal nano-emitters, and the detaching of atoms or atomic cluster from nano-protrusion mainly contribute to the thermal runaway event for refractor metals such as Ti, Zr, Mo and W. The critical E-field strength of metal nano-emitters is found to be strongly correlated with structural parameters (atomic coordination number of liquid and equilibrium lattice constant), thermodynamic quantities (cohesive energy and enthalpy of evaporation) and phase transition temperatures (melting point and boiling point). Those correlations enable us to establish either the single-variable linear fitting models or multi-variable linear regression models to predict the critical E-field value for metal nano-emitters with good credibility.

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Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone

Jebalin,

Franklin,

et al. 2024

Microelectronics Journal

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Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

Cited by 9 publications

References 28 publications

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Atomic structure evolution and linear regression fitting models for pre-breakdown electric field strength of FCC, BCC and HCP metal nano-emitters under high electric field from PIC-ED–MD simulations

Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone

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