Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone

Jebalin, I.V.Binola K; Franklin, S. Angen; G, Gifta; P, Prajoon; Nirmal, D.

doi:10.1016/j.mejo.2024.106158

Microelectronics Journal

2024

DOI: 10.1016/j.mejo.2024.106158

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Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone

I.V.Binola K Jebalin,

S. Angen Franklin,

Gifta G

et al.

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Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone

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References 25 publications

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