Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and <i>in situ</i> capping

Swerts, Johan; Gielis, Sven; Vereecke, Guy; Hardy, An; Dewulf, Daan; Adelmann, Christoph; Bael, Marlies K. Van; Elshocht, Sven Van

doi:10.1063/1.3557501

Cited by 13 publications

(5 citation statements)

References 16 publications

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“…This behavior may be explained by a gradually increasing contribution of the CVD component. This may be due to larger hygroscopicity for lower density (and/or higher C contamination) Gd 2 O 3 , similar to what has been observed for LaAlO 3 . If one assumes that the CVD component deposits a lower density and/or higher C-contaminated layer, there may exist some intrinsic positive feedback for the CVD component, leading to deteriorating film quality and increasing WiWNU as the deposition progresses.…”

Section: Resultsmentioning

confidence: 58%

Reaction Chemistry during the Atomic Layer Deposition of Sc₂O₃ and Gd₂O₃ from Sc(MeCp)₃, Gd(ⁱPrCp)₃, and H₂O

et al. 2014

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The reaction chemistry during the atomic layer deposition (ALD) of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O was investigated by in situ time-resolved quadrupole mass spectrometry. Despite the similarity of the ligands of the Sc and Gd precursors, the growth characteristics and ligand dissociation patterns of the Sc2O3 and Gd2O3 ALD processes showed considerably different behavior. For both processes, the precursors reacted with the hydroxylated surface by proton transfer and release of the protonated ligand. The remaining ligands were then removed by hydrolysis during the H2O pulse. However, for the Sc(MeCp)3/H2O process, ∼56% of MeCpH was released during the Sc(MeCp)3 exposure, whereas in the case of the Gd(iPrCp)3/H2O process, as much as 90% of iPrCpH was released during the Gd(iPrCp)3 pulse. The observation that almost all iPrCp ligands were removed during the initial Gd(iPrCp)3 absorption step can be ascribed to CVD-like reactions between the Gd(iPrCp)3 precursor and excess hydroxide or physisorbed H2O on the hygroscopic Gd2O3 surface. The influence of the growth temperature on the ligand exchange behavior and the resulting film properties (thickness uniformity, impurity concentration) was studied in the temperature range between 200 and 350 °C. In addition, the transient growth behavior of Gd2O3 on Sc2O3 and vice versa was studied, indicating that the hygroscopic nature of Gd2O3 also strongly influences the deposition of Gd x Sc1–x O3 ternary oxides.

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Section: Resultsmentioning

confidence: 58%

Reaction Chemistry during the Atomic Layer Deposition of Sc₂O₃ and Gd₂O₃ from Sc(MeCp)₃, Gd(ⁱPrCp)₃, and H₂O

et al. 2014

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“…This discrepancy can be resolved if the vibrational modes did not stem from the formation of oxycarbonates during deposition, [53] but from reactive surface (or near surface) adsorption of CO 2 or carboxyl groups from the atmosphere, as the low-temperature-grown ALD films show low density. [54] This interpretation is further upheld by the post-deposition anneal behavior of the low-temperaturegrown ALD films at 400 8C in an inert N 2 atmosphere. The analysis showed that ALD films deposited at 140 8C were found to show a measurable decrease in both mass and thickness with a concomitant gain in density (À3% for mass and thickness and þ4% for density) due to outgassing of impurities and film shrinkage.…”

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confidence: 93%

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

Premkumar

Toeller

Adelmann

et al. 2012

Chemical Vapor Deposition

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NiO thin films are deposited by atomic layer deposition (ALD) from the Ni(dmamb) 2 (dmamb ¼ 1-dimethylamino-2-methyl-2-butanolate) precursor using O 3 as the oxidizer. The films are analyzed for wafer uniformity, structure, composition, morphology, microstructure, and homogeneity. The Ni(dmamb) 2 half-cycle shows an initial rapid partial saturation followed by slower further adsorption. By contrast, the O 3 half-cycle shows good saturation behavior. In the studied deposition temperature range for ALD, the films are polycrystalline with negligible amounts of carbon in the films. Furthermore, the films are homogeneous in thickness and composition, demonstrating that high-quality NiO films can be deposited by ALD from Ni(dmamb) 2 .

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“…Peak IV, related to La(OH) x , may come from the hygroscopicity of the La 2 O 3 [ 16 ]. After high temperature annealing treatments, significant decrease in the intensity of peak IV could be observed, indicating the reduction of hydroxyl groups [ 17 ]. It is found that the intensity of Peak V shows a more obvious increase when the annealing treatment was carried out in O 2 ambient compared with that in N 2 or vacuum ambient, indicating that more Si–O–Si bonds were formed during the RTA process in O 2 ambient.…”

Section: Resultsmentioning

confidence: 99%

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

et al. 2017

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We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O2 ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO3/Si MIS capacitors, positive V FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO3/Si structure in varying degrees.

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Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping

Abstract: Articles you may be interested inEffect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

Cited by 13 publications

References 16 publications

Reaction Chemistry during the Atomic Layer Deposition of Sc₂O₃ and Gd₂O₃ from Sc(MeCp)₃, Gd(ⁱPrCp)₃, and H₂O

Reaction Chemistry during the Atomic Layer Deposition of Sc₂O₃ and Gd₂O₃ from Sc(MeCp)₃, Gd(ⁱPrCp)₃, and H₂O

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

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Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping

Abstract: Articles you may be interested inEffect of annealing and electrical properties of high-κ thin films grown by atomic layer deposition using carboxylic acids as oxygen source

Cited by 13 publications

References 16 publications

Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O

Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

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Reaction Chemistry during the Atomic Layer Deposition of Sc₂O₃ and Gd₂O₃ from Sc(MeCp)₃, Gd(ⁱPrCp)₃, and H₂O

Reaction Chemistry during the Atomic Layer Deposition of Sc₂O₃ and Gd₂O₃ from Sc(MeCp)₃, Gd(ⁱPrCp)₃, and H₂O

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors