Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment

Park, Dong Jin; Lim, Jung Wook; Park, Byung Ok

doi:10.1016/j.sse.2009.10.017

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…Therefore, the use of a plasma provides additional variables with which to tune the stoichiometry and composition of the films. These include the operating pressure, 205,225,245 plasma power, 52,62,70,151,152,167,183,213,214,233 plasma exposure time, 164,183,213,214,221,222,228,236,237,245 the admixing of additional gases into the plasma, 30,74,215,218 and the biasing voltage. 138,318 It is, for example, relatively straightforward to incorporate N atoms into oxide thin films by the addition of N 2 to a plasma generated in O 2 .…”

Section: Increased Choice Of Precursors and Materialsmentioning

confidence: 99%

“…Plasmas can be used for substrate pretreatment (e.g. oxidation by an O 2 plasma 69,70,119,122,130,132,149 and nitridation by NH 3 or N 2 plasmas 119,129,132 ), substrate cleaning, 98 post-deposition treatments, 141,164 and reactor wall conditioning and cleaning. 240 For example, a layer of TiN covering the walls of the reactor can be removed easily by running a F-based plasma such as one generated in NF 3 or SF 6 .…”

Section: F More Processing Versatility In Generalmentioning

confidence: 99%

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Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

729

537

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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Section: Increased Choice Of Precursors and Materialsmentioning

confidence: 99%

Section: F More Processing Versatility In Generalmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

729

537

View full text Add to dashboard Cite

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“…Recently, the improved thermal stability of the Al 2 O 3 /HfO 2 /Al 2 O 3 stacks on GaAs was demonstrated by using the amorphous Al 2 O 3 as the passivation layers, which can improve the interfacial properties and can prevent trap charge formation [15]. Stable Al 2 O 3 gate oxides were fabricated on plastic substrates for the application of the low-temperature polysilicon thin-film transistor in flexible electronic technology [16]. The dual-gated graphene devices with Al 2 O 3 gate dielectrics prepared by an O 3 -based atomic layer deposition (ALD) process show a low leakage current and a low hysteresis width [17].…”

mentioning

confidence: 99%

Comparison of the Reliability of Thin $\hbox{Al}_{2} \hbox{O}_{3}$ Gate Dielectrics Prepared by In Situ Oxidation of Sputtered Aluminum in Oxygen Ambient With and Without Nitric Acid Compensation

Lin

Hwu

2011

IEEE Trans. Device Mater. Relib.

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The electrical characteristics and reliability of the aluminum oxide (Al 2 O 3 ) metal-oxide-semiconductor (MOS) capacitors were investigated under low-temperature process consideration. The simple cost-effective technique in preparing the Al 2 O 3 /SiO 2 bilayer structure as the high-k gate dielectrics was demonstrated in this paper. SiO 2 was prepared by roomtemperature anodic oxidation, and Al 2 O 3 was fabricated by room-temperature in situ natural oxidation during the dc sputtering of aluminum in Ar/O 2 ambient. Compared to the Al 2 O 3 MOS capacitors without nitric acid (HNO 3 ) compensation, significant improvements in electrical characteristics, reliability, and uniformity were achieved by utilizing HNO 3 to moderately oxidize the existing Al 2 O 3 layer. In addition, the charge trapping behaviors of our samples were also studied by time-dependent dielectric breakdown under the 1000-s constant voltage stress and constant current stress tests. It was found that the electron trapping is dominant under a low negative bias stress. However, under a high negative bias stress, the Al 2 O 3 MOS capacitors show hole trapping due to the impact ionization near the SiO 2 /Si interface. The in situ oxidation in sputtering with HNO 3 compensation is suitable for future low-temperature dielectric applications.Index Terms-Al 2 O 3 , anodic oxide, HNO 3 compensation, low temperature, metal-oxide-semiconductor (MOS) capacitor.

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