aWe utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a SiO 2 /p-Si substrate. For fundamental study, the effect of the channel thickness and thermal treatment on the TFT performance was investigated. The growth modes for the ALD-grown ZnO layer changed from island growth to layer-by-layer growth at thicknesses of >7.5 nm with highly resistive properties. A channel thickness of 17 nm resulted in good TFT behavior with an on/off current ratio of >10 6 and a field effect mobility of 2.9 without the need for thermal annealing. However, further increases in the channel thickness resulted in a deterioration of the TFT performance, or no saturation. The ALD-grown ZnO layers showed reduced electrical resistivity and carrier density after thermal treatment in oxygen.
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