Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition

Woo, Chang Ho; Ahn, Cheol Hyoun; Kwon, Yong Hun; Han, Jae‐Hee; Cho, Hyung Koun

doi:10.1007/s12540-012-6020-5

Cited by 11 publications

(5 citation statements)

References 28 publications

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“…We previously reported the use of AlO x for ZTO TFTs and demonstrated a mobility of ∼30 cm 2 /(V s) . Other groups exhibited high-performance TFTs through atomic layer deposition, or anodic deposition of AlO x . The reason for the improved performance has been ascribed to the high conduction band offset, lowering of the source drain contact resistance and the lowering of the channel resistance .…”

Section: Resultsmentioning

confidence: 99%

Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing

Avis

Hwang

Jang

2014

ACS Appl. Mater. Interfaces

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We report the fabrication of high field-effect mobility of ∼110 cm(2)/(V s) for inkjet printed indium-zinc-tin oxide (IZTO) thin film transistors (TFTs). It is found that the morphology of IZTO material deposited by inkjet printing depends strongly on its thickness. When the thickness is 35 nm, IZTO is an homogeneous amorphous material and the TFT exhibits mobility over 100 cm(2)/(V s) and on/off current ratio of >10(6). However, when the thickness is 85 nm, IZTO has a two layer structure of homogeneous and heterogeneous materials and thus the TFT exhibited a mobility of ∼20 cm(2)/(V s). When the thickness is 800 nm, the morphology is porous and heterogeneous and thus the on/off current ratio is less than 1 × 10(3) and its mobility is ∼14 cm(2)/(V s). It is concluded therefore that homogeneous amorphous IZTO TFT on Al2O3 gate insulator can show high mobility, which can be achieved by thin layer formation by inkjet printing.

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Section: Resultsmentioning

confidence: 99%

Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing

Avis

Hwang

Jang

2014

ACS Appl. Mater. Interfaces

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“…Hafnia and alumina are high-κ dielectrics with remarkable properties, such as high abrasion resistance and high thermal and chemical stability, which make them useful in a wide area of applications: dielectric gate in various types of transistors [1,2], mirrors or antireflective coatings. They can be also used for the development of important components in novel high-temperature energy devices, such as hybrid thermionic converters, as a promising alternative to the presently used ceramics [3].…”

Section: Introductionmentioning

confidence: 99%

Properties of Hafnium and Aluminium Silicates Coatings Obtained by PLD

Sirjita¹,

Rusen²,

Brajnicov³

et al. 2021

Coatings

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We report on the deposition and characterization of hafnium silicate and aluminium silicate thin films for different applications in optics and electronics. Pulsed laser deposition in a controllable oxygen atmosphere was used as a processing technique, with optimized parameters in terms of laser wavelength, laser fluence and oxygen pressure. The thin films were investigated using atomic force microscopy, spectroscopic ellipsometry, UV–VIS spectroscopy and X-ray photoelectron spectroscopy. The morphological investigations evidenced uniform layers with low roughness (in the order of nanometres). The optical investigations revealed that aluminium silicate layers with low roughness and low absorption in the infrared (IR) range can be obtained at high substrate temperatures (600 °C). The behaviour of the silicate thin films with respect to the nanosecond IR laser irradiation revealed that aluminium silicate layers have higher laser-induced damage threshold values in comparison with hafnium silicate.

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“…Wide band gap metal oxides, such as ZnO, In 2 O 3 , InZnO, and InGaZnO (IGZO) are promising materials for transparent and flexible transistors. − The ideal application of metal oxide transistors is in display technologies, where IGZO-based backplanes have been introduced as an alternative to amorphous Si. In particular, metal oxide electrolyte-gated (EG) transistors are attractive for display backplanes because of their high driving current and low operation voltage.…”

Section: Introductionmentioning

confidence: 99%

Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes

Valitova

Natile

Soavi

et al. 2017

ACS Appl. Mater. Interfaces

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Metal oxide semiconductors are interesting for next-generation flexible and transparent electronics because of their performance and reliability. Tin dioxide (SnO) is a very promising material that has already found applications in sensing, photovoltaics, optoelectronics, and batteries. In this work, we report on electrolyte-gated, solution-processed polycrystalline SnO transistors on both rigid and flexible substrates. For the transistor channel, we used both unpatterned and patterned SnO films. Since decreasing the SnO area in contact with the electrolyte increases the charge-carrier density, patterned transistors operate in the depletion mode, whereas unpatterned ones operate in the enhancement mode. We also fabricated flexible SnO transistors that operate in the enhancement mode that can withstand moderate mechanical bending.

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Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition

Cited by 11 publications

References 28 publications

Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing

Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing

Properties of Hafnium and Aluminium Silicates Coatings Obtained by PLD

Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes

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