Stability of thermally oxidized silicon junctions in wet atmospheres

Atalla, M. M.; Bray, Adam; Lindner, R.

doi:10.1049/pi-b-2.1959.0204

Cited by 23 publications

(8 citation statements)

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“…Shockley et al (37) studied quantitatively the charge separation in humid atmosphere on SiO._, in the fringing field of a p-n junction underneath a SiO2 film. He was able to show that the electric effects in the silicon observed under these conditions were due to lateral charge motion on the silica surface, as suggested by Atalla et al (38) and not due to charge motion in the oxide perpendicular to the surface. He did not specify the nature of the charge carriers.…”

Section: Enhanced Conductivity In the Presence Of Water-mentioning

confidence: 64%

On the Mechanisms of Electrolytic Rectification

Schmidt¹

1968

J. Electrochem. Soc.

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A literature survey of papers dealing with electrolytic rectification and related topics is given for the period 1959–1966. Experiments on current flow in the system normaln‐normaltype Si/SiO2/normalelectrolyte are then presented, which indicate the importance of adsorbed water for the electrical properties of this system. The initial increase in conductivity after exposure of the anodic SiO2 film to water is likely to be of electronic origin. However, protons can be injected at low voltages into the hydrated SiO2 but not into dry SiO2 . The injected protons cause a gradual increase of current with time at constant voltage due to enhanced field emission from traps and/or from the cathode. Hydration of the oxide, and its electrical properties, can be reversed by a bake at 150°C in air. Either alkali ions or protons, or both, incorporated into an anodic oxide film by anodization in an incompletely “dry” organic solvent, have a strong effect on lowering the cathodic breakdown voltage at which the current begins to increase with time at constant voltage.

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Section: Enhanced Conductivity In the Presence Of Water-mentioning

confidence: 64%

On the Mechanisms of Electrolytic Rectification

Schmidt¹

1968

J. Electrochem. Soc.

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“…The dependence of the surface sheet resistance, R , on humidity, and the impact on the performance of MOS structures, are well documented [25,26,27]. Under the simplified assumption that the sheet resistance is independent of the electric field, the time dependence of the distribution of the surface charge on the way to the steady state scales with R .…”

Section: Charge Losses and Their Time Dependencementioning

confidence: 99%

Charge losses in segmented silicon sensors at the Si–SiO2 interface

Poehlsen

Fretwurst

Klanner

et al. 2013

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tUsing multi-channel time-resolved current measurements (multi-TCT), the charge collection of p þ n silicon strip sensors for electron-hole pairs produced close to the Si-SiO 2 interface by a focussed subnanosecond laser with a wavelength of 660 nm has been studied. Sensors before and after irradiation with 1 MGy of X-rays have been investigated. The charge signals induced in the readout strips and the rear electrode as a function of the position of the light spot are described by a model which allows a quantitative determination of the charge losses and of the widths of the electron-accumulation and hole-inversion layers close to the Si-SiO 2 interface. Depending on the applied bias voltage, biasing history and environmental conditions, like humidity, incomplete electron or hole collection and different widths of the accumulation layers are observed. In addition, the results depend on the time after biasing the sensor, with time constants which can be as long as days. The observations are qualitatively explained with the help of detailed sensor simulations. Finally, their relevance for the detection of X-ray photons and charged particles, and for the stable operation of segmented p þ n silicon sensors is discussed.

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“…It was recognized 40 years ago that the surface conductivity of the dielectric substrate can have a detrimental effect on the performance of solid-state electronic devices. 33 A concentrated effort has been made to minimize the influence of possible parasitic pathways. The insulating substrates are typically oxides (e.g., glass, quartz, sapphire, etc.).…”

Section: Chemically Induced Effects At the Organic Semiconductor/diel...mentioning

confidence: 99%

Chemical Effects in Organic Electronics

et al. 2004

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Effects of the chemical environment on devices utilizing organic semiconductors are discussed. It is convenient and justified to use silicon-based insulated gate field-effect transistors (IGFET) as the yardstick by which the performance of organic field-effect transistors (OFET) are measured. However, the same issues may apply to other types of devices utilizing organic semiconductors (OS). The focus of this article is on chemical modulation of the critical parts of these devices, specifically on the bulk electronic properties, contacts between the metal and OS, and interface between the OS and the insulating support. Controlled interactions between the chemical environment and the solid-state devices have been well documented and utilized in chemical sensors. On the other hand, uncontrolled chemical interactions with a solid-state device may lead to experimental artifacts in electronics that is intended for signal and information processing.

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Stability of thermally oxidized silicon junctions in wet atmospheres

Cited by 23 publications

References 0 publications

On the Mechanisms of Electrolytic Rectification

On the Mechanisms of Electrolytic Rectification

Charge losses in segmented silicon sensors at the Si–SiO2 interface

Chemical Effects in Organic Electronics

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