2004
DOI: 10.1021/cm040101m
|View full text |Cite
|
Sign up to set email alerts
|

Chemical Effects in Organic Electronics

Abstract: Effects of the chemical environment on devices utilizing organic semiconductors are discussed. It is convenient and justified to use silicon-based insulated gate field-effect transistors (IGFET) as the yardstick by which the performance of organic field-effect transistors (OFET) are measured. However, the same issues may apply to other types of devices utilizing organic semiconductors (OS). The focus of this article is on chemical modulation of the critical parts of these devices, specifically on the bulk elec… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
15
0

Year Published

2009
2009
2019
2019

Publication Types

Select...
3
2
2

Relationship

1
6

Authors

Journals

citations
Cited by 26 publications
(15 citation statements)
references
References 69 publications
(103 reference statements)
0
15
0
Order By: Relevance
“…In the OFET structure, silicon serves as the OFET ''gate'' electrode and the current passes through the conducting polymer ( Figure 8.2b), which encounters at least three resistances: two at the contacts and one in the conducting polymer, which is very similar to the Schottky diode arrangement. The chemical modulation of work function and the perpendicular electric field for |V G | > 0 affect all of these resistances in a highly nonlinear manner [25,40], which indeed shows a ''voltage-dependent resistor'' behavior. It is obvious that, because of the low mobility of the charge carriers in conducting polymers, the polarization space charge region (expressed as polarization resistance R P ) is created by the depletion of the charge carriers at the vicinity of the drain electrode, analogous to the formation of a diffusion depletion layer in the electrochemical experiment.…”
Section: Ofets -Field-modulated Chemiresistorsmentioning
confidence: 99%
See 2 more Smart Citations
“…In the OFET structure, silicon serves as the OFET ''gate'' electrode and the current passes through the conducting polymer ( Figure 8.2b), which encounters at least three resistances: two at the contacts and one in the conducting polymer, which is very similar to the Schottky diode arrangement. The chemical modulation of work function and the perpendicular electric field for |V G | > 0 affect all of these resistances in a highly nonlinear manner [25,40], which indeed shows a ''voltage-dependent resistor'' behavior. It is obvious that, because of the low mobility of the charge carriers in conducting polymers, the polarization space charge region (expressed as polarization resistance R P ) is created by the depletion of the charge carriers at the vicinity of the drain electrode, analogous to the formation of a diffusion depletion layer in the electrochemical experiment.…”
Section: Ofets -Field-modulated Chemiresistorsmentioning
confidence: 99%
“…It should be noted that semiconductor junction gas sensors are strongly related to the nature of the interfacial electronic structure of the Schottky barrier [25]. An extensive review on the properties of conducting polymer Schottky barrier junction and their sensor applications is given in [26].…”
Section: Contact Resistance Changes (Schottky Barrier)mentioning
confidence: 99%
See 1 more Smart Citation
“…The bulk, surface and interface impedance are connected in parallel. This is then connected to the contact impedance is in series [48,49]. Since the devices operate in direct current mode, the capacitance need not be taken into consideration (Fig.…”
Section: Sensor Response Characteristics Conjugated Molecule Sensorsmentioning
confidence: 99%
“…The equivalent circuit in Fig. 1 can be used to describe a general organic electronic device [6]. In our case it can be simplified into the following mathematic model with the complex impedance Z:…”
Section: Feature Extractionmentioning
confidence: 99%